STP7NM60N |
Part Number | STP7NM60N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to y... |
Features |
TAB
Order code
VDS
RDS(on) max.
ID
Package
uct(s) TO-220
1 23
STP7NM60N
600 V
0.9 Ω
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance 5A TO-220 Prod D(2, TAB) Applications • Switching applications solete G(1) t(s) - Ob S(3) AM01475v1_noZen Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable ... |
Document |
STP7NM60N Data Sheet
PDF 314.24KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP7NM60N |
INCHANGE |
N-Channel MOSFET | |
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