| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
NPN Transistor ) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 2 4 1 2 20 -65 to 150 150 Uni t V V V A A A |
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STMicroelectronics |
High voltage fast-switching NPN Power Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ In compliance with the 2002/93/EC European Directive Description The device is manufactured using high volta |
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STMicroelectronics |
5A low dropout fast response positive voltage regulator adjustable ■ Typical dropout 1.2 V ■ Fast transient response www.DataSheet4U ■.comThree terminal adjustable ■ Guaranteed output current up to 5 A ■ Output tolerance ± 1 % at 25 °C and ± 2 % in full temperature range ■ Internal power and thermal limit ■ Wide oper |
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STMicroelectronics |
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR mitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. |
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STMicroelectronics |
High voltage fast-switching NPN Power Transistor ■ ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive 3 1 DPAK TO-252 IPAK TO-251 1 2 3 Description The |
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STMicroelectronics |
5A low dropout fast response positive voltage regulator adjustable ■ ■ Typical dropout 1.2 V Fast transient response up to 5 A ■ Three terminal adjustable www.DataSheet4U.com ■ Guaranteed output current ■ ■ ■ ■ ■ Output tolerance ± 1 % at 25 °C and ± 2 % in full temperature range Internal power and thermal limit |
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STMicroelectronics |
N-channel Power MOSFET Order code STLD125N4F6AG VDS 40 V RDS(on) max. 3.0 mΩ ID 120 A AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Wettable flank package Applications Switching applicat |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS RDS(on) max. STLD110N10F7 100 V 6 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 107 A D(5, 6, 7, 8) Applications • Switchin |
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STMicroelectronics |
NPN Transistor |
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STMicroelectronics |
Adjustable and fixed low drop positive voltage regulator |
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STMicroelectronics |
Adjustable and fixed low drop positive voltage regulator |
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