BULD116D |
Part Number | BULD116D |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance... |
Features |
mitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 400 200 9 5 10 2 4 20 -65 to 150 150 Unit V V V A A A A W
o o
C C
September 2003
1/6
BULD116D
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 6.25 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CE... |
Document |
BULD116D Data Sheet
PDF 167.88KB |
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2 | BULD1101ET4 |
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3 | BULD118 |
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4 | BULD118D-1 |
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5 | BULD125KC |
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