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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo |
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STMicroelectronics |
ultra fast IGBT Type STGW30NC60WD ■ ■ ■ VCES 600V VCE(sat)Max @25°C < 2.5V IC @100°C 30A High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-247 Description Using the latest h |
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STMicroelectronics |
STGW30V60DF • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo |
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STMicroelectronics |
short circuit rugged IGBT ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes t |
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STMicroelectronics |
STGW30NC120HD Type VCES STGW30NC120HD 1200V VCE(sat) @25°C < 2.75V IC @100°C 30A ■ Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven) ■ Low gate charge ■ Ideal for soft switching application Applic |
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STMicroelectronics |
short circuit rugged IGBT ■ ■ ■ ■ ■ Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with ultra fast free-wheeling diode 1 2 3 Application ■ TO-247 Motor control Description This IGBT utilizes the advanced PowerMES |
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STMicroelectronics |
30A high speed HB series IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coeffi |
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STMicroelectronics |
very fast IGBT ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 1 3 1 3 2 2 Applications ■ ■ Induction cooking, microwave ovens Soft-switching applications TO-247 TO-3P Desc |
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STMicroelectronics |
30A high speed trench gate field-stop IGBT • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short circuit rated • Ultrafast soft recovery antiparallel diode 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram C (2, TAB) G (1) |
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STMicroelectronics |
Ultrafast IGBT ■ Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses Applications ■ Welding ■ High frequency converters ■ Power factor correction Description This Ultrafast IGBT is developed using a new planar technology to yield a |
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STMicroelectronics |
Ultrafast IGBT ■ Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses Applications ■ Welding ■ High frequency converters ■ Power factor correction Description This Ultrafast IGBT is developed using a new planar technology to yield a |
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STMicroelectronics |
very fast IGBT ■ ■ ■ ■ ■ ■ Low on-losses Low on-voltage drop (VCE(sat)) High current capability High input impedance (voltage driven) Low gate charge Ideal for soft switching application TO-247 1 2 3 Application ■ Induction heating Description This IGBT utilize |
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STMicroelectronics |
ultra fast IGBT ■ ■ High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) 2 1 3 1 2 3 Applications ■ ■ High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies TO-247 3 1 TO-220 |
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STMicroelectronics |
Trench gate field-stop IGBT 6 µs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 50 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS P |
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STMicroelectronics |
IGBT ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) t(s)Applications uc ■ High frequency motor controls, inverters, ups d ■ HF, SMPS and PFC in both hard switch and roresonant topologies te PDescription oleThis I |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.55 V (typ.) at IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverte |
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