STGW30H65FB |
Part Number | STGW30H65FB |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between co... |
Features |
• Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.55 V (typ.) at IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Power factor correction • Welding • High-frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency... |
Document |
STGW30H65FB Data Sheet
PDF 432.91KB |
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1 | STGW30H60DF |
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2 | STGW30H60DFB |
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