| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
very fast IGBT • Low on-voltage drop (VCE(sat)) • Very soft ultrafast recovery anti-parallel diode Applications • High frequency motor drives • SMPS and PFC in both hard switch and resonant topologies Description These devices are ultrafast IGBT. They utilize the a |
|
|
|
|
STMicroelectronics |
very fast IGBT ■ Low www.DataSheet4U.com ■ Low ■ on-voltage drop (VCE(sat)) 3 1 1 3 2 CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery anti-parallel diode D²PAK TO-220 Applications ■ ■ ■ High frequency motor controls SMPS a |
|
|
|
|
STMicroelectronics |
N-channel IGBT Type VCES VCE(sat) (max)@25°C IC @100°C STGP19NC60WD 600V STGW19NC60WD 600V < 2.5V < 2.5V 22A 23A ■ High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Desc |
|
|
|
|
STMicroelectronics |
IGBT 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 10 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Descri |
|
|
|
|
STMicroelectronics |
19 A - 600 V - very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ High input impedance (voltage driven) Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advanced PowerMESH™ process resulting |
|
|
|
|
STMicroelectronics |
Fast IGBT ■ ■ ■ ■ ■ Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET™ technology Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) Very low-on voltage drop (VCE(sat)) and energy per pulse for improv |
|
|
|
|
STMicroelectronics |
19 A - 600 V - ultra fast IGBT ■ High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility) Applications ■ High frequency motor controls, inverters, UPS ■ HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the adv |
|
|
|
|
STMicroelectronics |
very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ High input impedance (voltage driven) Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advanced PowerMESH™ process resulting |
|
|
|
|
STMicroelectronics |
IGBT ■ Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247 ■ Very low-on voltage drop (VCE(sat)) a |
|
|
|
|
STMicroelectronics |
Trench gate field-stop IGBT • 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • W |
|
|
|
|
STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V @ IC = 15 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fast recov |
|
|
|
|
STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient • Excellent switching performance tha |
|