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STGW15M120DF3 |
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| Part Number | STGW15M120DF3 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to ma... |
| Features |
• 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sa... |
| Document |
 STGW15M120DF3 Data Sheet
PDF 1.02MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STGW15H120DF2 |
STMicroelectronics |
IGBT |
|
| 2 | STGW100H65FB2-4 |
STMicroelectronics |
IGBT |
|
| 3 | STGW100N30 |
STMicroelectronics |
Fast IGBT |
|
| 4 | STGW10M65DF2 |
STMicroelectronics |
IGBT |
|
| 5 | STGW12NB60H |
ST Microelectronics |
N-CHANNEL IGBT |
|