| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
short-circuit rugged IGBT ■ ■ ■ ■ ■ TAB 2 TAB Short circuit withstand time 10µs. Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode 3 1 1 |
|
|
|
|
STMicroelectronics |
600V short-circuit rugged IGBT Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 μs Applications High frequency motor controls SMPS and PFC in b |
|
|
|
|
STMicroelectronics |
low drop IGBT ■ Low on-voltage drop (VCE(sat)) ■ High current capability ■ Very soft ultra fast recovery antiparallel diode Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced Power MESH™ process featuring extremel |
|
|
|
|
STMicroelectronics |
600V short-circuit rugged IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ High frequency inverters ■ Motor drivers Descripti |
|
|
|
|
STMicroelectronics |
IGBT ■ Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247 ■ Very low-on voltage drop (VCE(sat)) a |
|
|
|
|
STMicroelectronics |
IGBT • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS • PFC Description E(3) NG1E3C2T These devices |
|
|
|
|
STMicroelectronics |
very fast IGBT • Low on-voltage drop (VCE(sat)) • Very soft ultrafast recovery anti-parallel diode Applications • High frequency motor drives • SMPS and PFC in both hard switch and resonant topologies Description These devices are ultrafast IGBT. They utilize the a |
|
|
|
|
STMicroelectronics |
600V short-circuit rugged IGBT • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and |
|
|
|
|
STMicroelectronics |
20 A - 600 V - short circuit rugged IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ High frequency inverters ■ Motor drivers Descripti |
|
|
|
|
STMicroelectronics |
Fast IGBT ■ ■ ■ ■ ■ Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET™ technology Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) Very low-on voltage drop (VCE(sat)) and energy per pulse for improv |
|
|
|
|
STMicroelectronics |
600 V fast IGBT ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies. ■ IGBT co-packaged with Ultrafast freewheeling diode Application Medium frequency motor drives Descripti |
|
|
|
|
STMicroelectronics |
very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ |
|
|
|
|
STMicroelectronics |
IGBT ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies ■ IGBT co-packaged with Ultrafast freewheeling diode Application Electronic light dimmer Description This |
|
|
|
|
STMicroelectronics |
Trench gate field-stop IGBT • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Description These devices are IGBTs develope |
|
|
|
|
STMicroelectronics |
Trench gate field-stop IGBT 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Descri |
|
|
|
|
STMicroelectronics |
short-circuit rugged IGBT ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction )susceptibility) t(s ■ Tight parameter distribution uc ■ Ultrafast soft-recovery antiparallel diode d ■ Short-circuit rugged P |
|
|
|
|
STMicroelectronics |
very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ |
|
|
|
|
STMicroelectronics |
short-circuit rugged IGBT Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 μs Applications High frequency motor controls SMPS and PFC in b |
|
|
|
|
STMicroelectronics |
IGBT ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies. ■ IGBT co-packaged with Ultrafast freewheeling diode Application Medium frequency motor drives Descripti |
|