GF100N30 |
Part Number | GF100N30 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) ... |
Features |
■ Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247 ■ Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency ) ■ High repetitive peak current capability ct(sDescription duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) - ObsoleteTable 1. Device summary soOrde... |
Document |
GF100N30 Data Sheet
PDF 673.99KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | GF10A |
ZOWIE |
Rectifier Diode | |
2 | GF10B |
ZOWIE |
Rectifier Diode | |
3 | GF10D |
ZOWIE |
Rectifier Diode | |
4 | GF10G |
ZOWIE |
Rectifier Diode | |
5 | GF10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT |