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STMicroelectronics |
very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ |
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STMicroelectronics |
IGBT Type STGB14NC60K STGD14NC60K VCES VCE(sat) (Max)@ 25°C IC @100°C 600V 600V <2.5V <2.5V 14A 14A ■ Low on-voltage drop (Vcesat) ■ Low Cres / Cies ratio ( no cross conduction susceptibility) ■ Short circuit withstand time 10µs Description Using |
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STMicroelectronics |
fast IGBT ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB ■ Low on-voltage drop (VCE(sat)) t(s)Application uc ■ Motor drive rodDescription te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an exce |
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STMicroelectronics |
600V short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re |
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STMicroelectronics |
600V short-circuit rugged IGBT • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and |
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STMicroelectronics |
N-channel IGBT Type STGD10NC60H ■ ■ VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A 3 1 Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK Description Using the latest high voltage technology based on a patented str |
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STMicroelectronics |
very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ |
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STMicroelectronics |
short-circuit rugged IGBT Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 μs Applications High frequency motor controls SMPS and PFC in b |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT TAB 23 1 DPAK C (2 or TAB) RG G (1) • AEC-Q101 qualified • SCIS energy of 180 mJ @ TC = 150 °C, L = 3 mH • Parts are 100% tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low satura |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu |
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STMicroelectronics |
short-circuit rugged IGBT • Designed for automotive applications and AEC-Q101 qualified • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) • Switching losses include diode recovery energy • Short-circuit rated • Very soft Ultrafast r |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT • AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed current capability • Gate and gate-emitter |
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STMicroelectronics |
short-circuit rugged IGBT • Designed for automotive applications and AEC-Q101 qualified • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) • Switching losses include diode recovery energy • Short-circuit rated • Very soft Ultrafast r |
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