| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET Type RDS(on) Ilim Vclamp VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 60 mΩ 6A 40 V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pi |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 50 W uc ■ 100% avalanche tested rod ■ Extremely high dv/dt capability P ■ Gate charge minimized te ■ Very low intrinsi |
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STMicroelectronics |
N-channel Power MOSFET Type STD7NM50N STD7NM50N-1 STF7NM50N STP7NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.78Ω <0.78Ω <0.78Ω <0.78Ω ID 1 3 2 5A 1 3 2 IPAK 5A 5A (1) 5A TO-220 1. Limited only by maximum temperature allowed 1 3 3 1 2 ■ ■ ■ 100% avalanche tes |
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STMicroelectronics |
N-channel Power MOSFET Type STD7NM60N STF7NM60N STP7NM60N STU7NM60N ■ ■ ■ VDSS @ TJmax RDS(on) max ID Pw 2 3 3 1 2 650 V < 0.9 Ω 4.7 A 45 W 20 W 45 W 45 W 1 IPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 |
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STMicroelectronics |
N-channel Power MOSFET Type STB7N52K3 STD7N52K3 STF7N52K3 STP7N52K3 VDSS 525 V 525 V 525 V 525 V RDS(on) max < 0.98 Ω < 0.98 Ω < 0.98 Ω ID 6.3 A 6.3 A 6.3 A Pw 3 3 90 W 90 W 25 W 90 W 1 1 D²PAK DPAK < 0.98 Ω 6.3 A(1) 1. Limited by package ■ ■ ■ ■ ■ ■ 100% avalanche |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD7N80K5 STP7N80K5 800 V STU7N80K5 • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected RDS(on) max ID 1.2 Ω 6A Applications • Switchi |
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STMicroelectronics |
N-CHANNEL POWER MOSFET TAB 3 1 DPAK Order code STD7NM64N VDS 640 V RDS(on) max. 1.05 Ω ID 5A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic diagram ' |
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STMicroelectronics |
N-channel Power MOSFET TAB 3 1 DPAK Figure 1. Internal schematic diagram D(2, TAB) G(1) Order code STD7N65M2 VDS 650 V RDS(on) max 1.15 Ω ID 5A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applic |
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STMicroelectronics |
N-channel Power MOSFET TAB Order code VDS RDS(on) max. ID 3 ) 2 t(s 1 c IPAK STD7NM80-1 800 V • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance 1.05 Ω 6.5 A Produ D(2, TAB) Applications • Switching applications solete |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET Type VND7N04 VND7N04-1 VNK7N04FM Vclamp 42 V 42 V 42 V RDS(on) 0.14 Ω 0.14 Ω 0.14 Ω Ilim 7A 7A 7A s Linear current limitation s Thermal shut down s Short circuit protection s Integrated clamp s Low current drawn from input pin s Diagnostic feedb |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET Type RDS(on) Ilim Vclamp VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 60 mΩ 6A 40 V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pi |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS STD7NK40ZT4 400 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 1Ω ID 5.4 A Applications • Switching applications Description AM01476v1_tab This high-voltage |
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STMicroelectronics |
N-channel Power MOSFET Type STD7NM50N STD7NM50N-1 STF7NM50N STP7NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.78Ω <0.78Ω <0.78Ω <0.78Ω ID 1 3 2 5A 1 3 2 IPAK 5A 5A (1) 5A TO-220 1. Limited only by maximum temperature allowed 1 3 3 1 2 ■ ■ ■ 100% avalanche tes |
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STMicroelectronics |
N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT TYPE STGP7NC60H STGD7NC60HT4 s s s s www.DataSheet4U.com Figure 1: Package IC @100°C 14 A 14 A 3 1 VCES 600 V 600 V VCE(sat) (Max) @25°C < 2.5 V < 2.5 V s LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES/CIES RATIO HIGH |
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STMicroelectronics |
STD7NB20 ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDS @ TJmax RDS(on) max. STD7N60M2 STP7N60M2 650 V 0.95 Ω STU7N60M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected ID 5A Applications • Switching applications |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. STD7N65M6 650 V 0.99 Ω • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected ID 5A Applications • Switching applications |
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STMicroelectronics |
Automotive-grade N-channel Power MOSFET Order code VDS RDS(on)max. ID STD7N95K5AG 950 V 1.25 Ω 9A PTOT 110 W • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applicati |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS RDS(on ) max. ID STD7N90K5 900 V 0.81 Ω 7A • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applicatio |
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STMicroelectronics |
N-Channel MOSFET Order code VDS RDS(on) max. ID STD7N60M6 600 V 900 mΩ 5A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected PTOT 72 W Applications • Switching ap |
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