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D7NB20 |
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| Part Number | D7NB20 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ± 30 7 5 28 55 0.44 5.5 – 65 to 150 150 (1) ISD≤ 7A, di/dt≤200 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns °C °C ( •)Pulse width limited by safe operating area July 2002 1/10 Datasheet pdf - http:... |
| Document |
 D7NB20 Data Sheet
PDF 453.19KB |
| Distributor | Stock | Price | Buy |
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