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STMicroelectronics |
fully autoprotected Power MOSFET Max. on-state resistance (per ch.) Current limitation (typ) ) Drain-Source clamp voltage RDS (on) ILIMH VCLAMP 0.2Ω 5A 70V uct(s ■ Linear current limitation rod ■ Thermal shutdown P ■ Short circuit protection te ■ Integrated clamp le ■ Low curren |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS@ TJmax STD5N60M2 STP5N60M2 650 V STU5N60M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected RDS(on) max. 1.4 Ω ID 3.5 A Applications • Switching applications |
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STMicroelectronics |
STD5NM60 Type STD5NM60 STD5NM60-1 STB8NM60 STP8NM60 STP8NM60FP VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) <1Ω <1Ω <1Ω <1Ω <1Ω ID 5A 5A 5A 8A 8 A(1) Pw 96 W 96 W 100 W 100 W 30 W ■ 100% avalanche tested ■ HIgh dv/dt and avalanche capabilities ■ Low input |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD5N95K5 950 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected RDS(on) max. 2.5 Ω ID 3.5 A Applications • Switching application |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STD5N80K5 VDS 800 V RDS(on) max. 1.75 Ω ID 4A Figure 1: Internal schematic diagram Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applicatio |
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STMicroelectronics |
STD5NK40Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on)max. STD5N52K3 STF5N52K3 525 V 1.5 Ω STU5N52K3 • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected ID 4.4 A Pa |
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STMicroelectronics |
N-channel MOSFET Order codes VDS RDS(on) max. STB5NK50Z-1 STD5NK50ZT4 STP5NK50Z 500 V 1.5 Ω STP5NK50ZFP STU5NK50Z • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected ID 4.4 A Package I2PAK DPAK TO-220 TO-220 |
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STMicroelectronics |
fully autoprotected Power MOSFET Max. on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage RDS (on) ILIMH VCLAMP 0.2Ω 5A 70V Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for repl |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max. ID PTOT STD5N60DM2 600 V 1.55 Ω 3.5 A 45 W Figure 1: Internal schematic diagram Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes VDS RDS(on) max. STD5NK40Z-1 STD5NK40ZT4 400 V 1.80 Ω • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected PTOT 45 W Package IPAK DPAK Applications • Switching applications Descriptio |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes VDS RDS(on) max. STD5NK40Z-1 STD5NK40ZT4 400 V 1.80 Ω • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected PTOT 45 W Package IPAK DPAK Applications • Switching applications Descriptio |
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STMicroelectronics |
N-channel MOSFET Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3 ■ ■ ■ ■ ■ ■ VDSS RDS(on) max. ID Pw 3 3 1 1 2 70 W 620 V < 1.6 Ω 4.2 A 25 W 70 W 1 2 3 TO-220 DPAK TO-220FP 100% avalanche tested Extremely large avalanche performance Gate ch |
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STMicroelectronics |
STD5NK50Z Order codes VDS RDS(on) max. STB5NK50Z-1 STD5NK50ZT4 STP5NK50Z 500 V 1.5 Ω STP5NK50ZFP STU5NK50Z • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected ID 4.4 A Package I2PAK DPAK TO-220 TO-220 |
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STMicroelectronics |
N-Channel Power MOSFET Type VDSS STB5NK52ZD-1 STD5NK52ZD-1 STD5NK52ZD STF5NK52ZD STP5NK52ZD 520 V 520 V 520 V 520 V 520 V RDS(on) max < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω ID Pw 4.4 A 70 W 4.4 A 70 W 4.4 A 70 W 4.4 A 25 W 4.4 A 70 W ■ 100% avalanche tested ■ Extre |
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STMicroelectronics |
N-Channel Power MOSFET Type VDSS STB5NK52ZD-1 STD5NK52ZD-1 STD5NK52ZD STF5NK52ZD STP5NK52ZD 520 V 520 V 520 V 520 V 520 V RDS(on) max < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω ID Pw 4.4 A 70 W 4.4 A 70 W 4.4 A 70 W 4.4 A 25 W 4.4 A 70 W ■ 100% avalanche tested ■ Extre |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDS @ Tjmax. STD5NK60ZT4 STP5NK60Z 650 V STP5NK60ZFP • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance RDS(on) max. 1.6 Ω Package DPAK TO-220 TO-220FP Applications • Switching applicatio |
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STMicroelectronics |
N-channel Power MOSFET Order code STD5N65M6 VDS 650 V RDS(on) max. 1.3 Ω ID 4A Figure 1: Internal schematic diagram Reduced switching losses Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applicati |
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STMicroelectronics |
N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET TYPE STD5N20L s s s s Figure 1: Package ID 5A Pw 33 W VDSS 200 V RDS(on) < 0.7 Ω TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 1 DPAK 3 DESCRIPTION The STD5N20L utilizes the latest advanced d |
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STMicroelectronics |
STD5NM50 52 3 2 1 IPAK TO-251 (Add Suffix “-1”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VDGR VGS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage ID Drain Current (continuous) at TC |
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