| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
N-CHANNEL MOSFET Order codes VDS RDS(on) max ID STD4N80K5 STF4N80K5 800 V STP4N80K5 2.5 Ω 3A STU4N80K5 • Outstanding RDS(on) * area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected PTOT 60 W 20 W 60 W A |
|
|
|
|
STMicroelectronics |
N-CHANNEL MOSFET inuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ±20 4 2.5 16 4 |
|
|
|
|
STMicroelectronics |
N-CHANNEL MOSFET MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot dv/dt(1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at |
|
|
|
|
STMicroelectronics |
N-CHANNEL MOSFET ) Tstg Tj June 2001 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C De |
|
|
|
|
STMicroelectronics |
N-CHANNEL MOSFET ) Tstg Tj June 2001 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C De |
|
|
|
|
STMicroelectronics |
N-CHANNEL MOSFET kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junctio |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code STD4N90K5 VDS 900 V RDS(on) max. 2.10 Ω ID 3A Figure 1: Internal schematic diagram Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applicatio |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order code VDS RDS(on) max. ID STD4NK60ZT4 600 V 2Ω 4A • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description AM01476v1_tab This high-voltage |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected PTOT 45 W Package IPAK DPAK G(1) Application |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected PTOT 45 W Package IPAK DPAK G(1) Application |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 600 V 2Ω STD4NK60ZT4 • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Zener-protected PTOT 70 W ID 4A Applications • Switching applications |
|
|
|
|
STMicroelectronics |
N-CHANNEL MOSFET s) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 250 250 ± 20 4 2.5 16 50 0.4 -65 to 150 150 Unit V V |
|
|
|
|
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR tinuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 400 400 ± 30 3.3 2.1 13.2 50 0.4 -65 to 150 150 |
|
|
|
|
STMicroelectronics |
N-CHANNEL MOSFET kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junctio |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS 500V 500V 500V 500V RDS(on) <2.7Ω <2.7Ω <2.7Ω <2.7Ω ID 3A 3A 3A 3A Pw 1 3 STD4NK50ZD-1 STD4NK50ZD STF4NK50ZD STP4NK50ZD ■ ■ ■ ■ ■ 45W 45W 20W 45W TO-220 3 1 2 DPAK 100% avalanche tested Extremely high dv/dt cap |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS 500V 500V 500V 500V RDS(on) <2.7Ω <2.7Ω <2.7Ω <2.7Ω ID 3A 3A 3A 3A Pw 1 3 STD4NK50ZD-1 STD4NK50ZD STF4NK50ZD STP4NK50ZD ■ ■ ■ ■ ■ 45W 45W 20W 45W TO-220 3 1 2 DPAK 100% avalanche tested Extremely high dv/dt cap |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
|
|
|
|
STMicroelectronics |
N-CHANNEL MOSFET ntinuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 4 2.5 16 |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes VDSS RDS(on) max ID Pw STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3 525 V < 2.6 Ω 2.5 A 45 W 2.5 A 20 W (1) 2.5 A 45 W 2.5 A 45 W 1. Limited by package ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Type STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic |
|