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STMicroelectronics |
MEDIUM POWER AMPLIFIER ction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Colle |
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STMicroelectronics |
LOW POWER PNP TRANSISTOR |
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STMicroelectronics |
MEDIUM POWER AMPLIFIER tance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parame |
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STMicroelectronics |
MEDIUM POWER AMPLIFIER ction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Colle |
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STMicroelectronics |
Low power NPN Transistor ■ Silicon epitaxial planar NPN medium voltage transistor ■ SOT-223 plastic package for surface mounting circuits ■ Available in tape & reel packing ■ In compliance with the 2002/93/EC European Directive ■ The PNP complementary type is BCP53-16 Applic |
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STMicroelectronics |
MEDIUM POWER AMPLIFIER j-tab • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I |
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