BCP52 |
Part Number | BCP52 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | www.DataSheet4U.com BCP52/53 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PU... |
Features |
j-tab • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -30 V V CB = -30 V I C = -100 µ A for BCP52 for BCP53 I C = -20 mA for BCP52 for BCP53 I C = -100 µ A for BCP52 for BCP53 I C = -10 µ A T j = 125 o C -60 -100 -60 -80 -60 -100 -5 Min. Typ. Max. -100 -10 Unit nA µA V V V V V... |
Document |
BCP52 Data Sheet
PDF 77.60KB |
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