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STMicroelectronics |
RF & MICROWAVE TRANSISTORS r high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 23 0.9 34 250 |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS * Device Current* (TC ≤ 50°C) 57 3.0 32 200 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.6 °C/W *Applies only to rated RF amplifier operati |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS ATA RTH(j-c) Junction-Case Thermal Resistance* 7.0 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM80912-005 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BV |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS lector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 63 2.75 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperatu |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS Value Unit 1. Collector 2. Base 3. Emitter 4. Base PIN CONNECTION PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 75˚C) 28 1.2 26 200 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature TH |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Curre |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS lications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol Parameter Value Un it PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG P ower Dissipation* Device Current* (TC ≤ 100 °C) 40 1.8 34 250 − 65 to +200 W A V °C |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS e with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Va |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS N 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 23 1.0 28 250 - 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage T |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS ion*(TC ≤ 75˚C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature 75 3.5 38 250 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.3 °C/W *Applies only to rate |
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STMicroelectronics |
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS c) Junction-Case Thermal Resistance* 3.0 °C/W *Applies only to rated RF amplifier operation March 1994 1/6 AM80912-015 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hF |
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STMicroelectronics |
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Collector Current* (TC ≤ 85° C) 75 3.5 40 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) |
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STMicroelectronics |
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS DATA RTH(j-c) Junction-Case Thermal Resistance* 0.75 °C/W *Applies only to rated RF amplifier operation August 1992 1/5 AM80912-085 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS IMUM RATINGS (T case = 25 °C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100 °C) 16.7 0.82 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Stor |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 37.5 1.8 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Oper |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS TION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 107 5.0 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Stora |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS ply Voltage* Junction Temperature Storage Temperature 67.3 2.67 28 200 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.6 °C/W *Applies only to rated RF amplifier operation September 1992 1/4 AM81719-030 ELECT |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS RTH(j-c) Junction-Case Thermal Resistance* 2.2 °C/W *Applies only to rated RF amplifier operation July 6, 1995 1/3 AM81719-040 ELECTRICAL SPECIFICATIONS (T case = 25 °C) STATIC Symbo l T est Co nditions Value Min . T yp. Max. Unit BVCBO BVEBO BV |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS lector-Supply Voltage* Junction Temperature Storage Temperature 31.8 1.47 24 200 − 65 to +200 W A V °C °C °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 5.5 *Applies only to rated RF amplifier operation NOTE: Thermal Resistance deter |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS tary and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS Ic VCC TJ T STG Power Dissipation* Device Current* (TC ≤100°C) 40 1.8 34 250 − 65 to |
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