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AM80814-025 |
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| Part Number | AM80814-025 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | AM80814-025 is a high power silicon Class C transistor designed for ultra-broadband L-Band radar applications. This device is capable of operation over a broad range of pulse widths and duty cycles. L... |
| Features |
ion*(TC ≤ 75˚C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
75 3.5 38 250 − 65 to +200
W A V °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.3 °C/W
*Applies only to rated RF amplifier operation
August 1992
1/3
AM80814-025
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Value Symbol Test Conditions Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE
IC = 10mA IE = 1mA IC = 20mA VBE = 0V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω VCE = 28V IC = 1A
55 3.5 55 — 15
— — — — —
— — — 5 150
V V V mA —
DYNAMIC
Value Symb... |
| Document |
 AM80814-025 Data Sheet
PDF 56.46KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | AM80814-005 |
STMicroelectronics |
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