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STMicroelectronics |
N-Channel Power MOSFET Order codes STB28NM50N STF28NM50N STP28NM50N STW28NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.158 Ω ID 21 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Descri |
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STMicroelectronics |
STF21NM50N Type VDSS (@Tjmax) RDS(on) ID STB21NM50N )STB21NM50N-1 t(sSTF21NM50N cSTP21NM50N uSTW21NM50N 550V 550V 550V 550V 550V < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω 18A 18A 18A(1) 18A 18A rod1. Limited by wire bonding P ■ 100% avalanche tested te ■ |
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STMicroelectronics |
N-channel MOSFET Type VDSS (@Tjmax) RDS(on) max ID STW55NM50N 550 V <0.054 Ω 54 A t(s) ■ 100% avalanche tested c ■ Low input capacitance and gate charge du ■ Low gate input resistance ProApplication te ■ Switching applications soleDescription ObThis series of device |
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STMicroelectronics |
N-Channel MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 Ω 11 A STD12NM50ND 550 V 0.38 Ω 11 A STF12NM50ND 550 V 0.38 Ω 11 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switchi |
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STMicroelectronics |
N-CHANNEL POWER MOSFET 3 2 1 TO-220FP Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.0042 Ω 65 A 35 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1. Intern |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STI150N10F7 STP150N10F7 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Swi |
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STMicroelectronics |
N-Channel MOSFET 3 2 1 TO-220FP TAB TAB I2PAK 1 2 3 TO-220 3 2 1 Figure 1. Internal schematic diagram ' 7$% * 6 $0Y Order codes STF14NM50N STI14NM50N STP14NM50N VDS @ TJmax RDS(on) max ID 550 V 0.32 Ω 12 A • 100% avalanche tested • L |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpo |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N 550 V 550 V 550 V 550 V 550 V 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 11 A 11 A 11 A 11 A (1) 11 A P ■ 100% avalanche tested te ■ Low input capacitanc |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) t(s) ■ Improved die-to-footprint ratio ■ Very low profile package (1 mm max) uc ■ Very low thermal resistance rod ■ Very low gate charge ■ Low threshold device lete PApplications o ■ Switching a |
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STMicroelectronics |
N-channel Power MOSFET Type VDSSS RDS(on) ID STD150NH02L )STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ct(s ■ RDS(on) * Qg industry’s benchmark u ■ Conduction losses reduced rod ) ■ Switching losses reduced P t(s ■ Low threshold device lete ducDescription so roT |
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STMicroelectronics |
N-Channel MOSFET Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N VDS RDS(on) max. 500 V 0.13 Ω ID PTOT 22 A 190 W 35 W 190 W 190 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching a |
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STMicroelectronics |
N-Channel MOSFET Order code VDS RDS(on) max. ID STP50N65DM6 650 V 91 mΩ 33 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedn |
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STMicroelectronics |
N-CHANNEL MOSFET TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N ■ ■ Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (*) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 T |
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STMicroelectronics |
STW150NF55 Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HI |
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STMicroelectronics |
N-channel Power MOSFET Type STB25NM50N STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N VDSS (@Tjmax) 550V 550V 550V 550V 550V RDS(on) <0.140Ω <0.140Ω <0.140Ω <0.140Ω <0.140Ω ID 3 3 22A 22A 22A(1) 22A 22A 1 2 1 2 TO-220FP 3 1 TO-220 D²PAK 3 12 1. Limited only by maxi |
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STMicroelectronics |
STP11NM50N Order codes STD11NM50N STF11NM50N STP11NM50N VDSS @TJmax RDS(on) max 550 V < 0.47 Ω ID 8.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These dev |
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STMicroelectronics |
N-channel Power MOSFET 3 2 1 TO-220FP TAB TAB I2PAK 1 2 3 TO-220 3 2 1 Figure 1. Internal schematic diagram ' 7$% * 6 $0Y Order codes STF14NM50N STI14NM50N STP14NM50N VDS @ TJmax RDS(on) max ID 550 V 0.32 Ω 12 A • 100% avalanche tested • Low |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N 550 V 550 V 550 V 550 V 550 V 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 11 A 11 A 11 A 11 A (1) 11 A P ■ 100% avalanche tested te ■ Low input capacitanc |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STD14NM50NAG VDS 500 V RDS(on) max. 0.320 Ω ID 12 A • AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications G(1) • Switching applications S(3) Description AM0147 |
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