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STMicroelectronics |
N-Channel MOSFET Order code STWA40N60M2 VDS 600 V RDS(on) max. 88 mΩ ID 34 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC resonant converters Des |
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STMicroelectronics |
STP140NF55 www.DataSheet4U.com Type VDSS 55V 55V 55V RDS(on) <0.008Ω <0.008Ω <0.008Ω ID (1) 80A 80A 80A 3 1 2 STB140NF55 STB140NF55-1 STP140NF55 1. Current limited by package 3 1 3 12 Description This Power MOSFET is the latest development of STMicroel |
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STMicroelectronics |
N-channel Power MOSFET Type STB40NF20 STP40NF20 STF40NF20 STW40NF20 VDSS RDS(on) ID PW 200V <0.045Ω 40A 160W 200V <0.045Ω 40A 160W 200V <0.045Ω 40A 40W 200V <0.045Ω 40A 160W ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeat |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR or VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area July 1993 Val ue STP40N10 ST P4 0N 10 F I 100 100 ± 20 40 22 28 15 160 160 150 |
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STMicroelectronics |
N-Channel MOSFET SIZE™ ” POWER MOSFET TYPE ST P40NE03L-20 s s s s V DSS 30 V R DS(on) <0.020 Ω ID 40 A TYPICAL RDS(on) = 0.014 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION 1 2 3 DESCRIPTION This Power MOSFET is th |
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STMicroelectronics |
STP140NF75 Type STB140NF75 STB140NF75-1 STP140NF75 VDSS 75V 75V 75V RDS(on) <0.0075Ω <0.0075Ω <0.0075Ω 1. Current limited by package ■ 100% avalanche tested ID 120A(1) 120A(1) 120A(1) Description This Power MOSFET is the latest development of STMicroelec |
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STMicroelectronics |
Low gate charge STripFET Power MOSFET Type STB40N20 STP40N20 STP40N20FP STW40N20 ■ ■ ■ ■ ■ VDSS 200V 200V 200V 200V RDS(on) <0.045Ω <0.045Ω <0.045Ω <0.045Ω ID 40A 40A 40A 40A PW 160W 160W 160W 40W TO-220 1 2 3 3 1 D2PAK Gate charge minimized Very low intrinsic capacitances Very g |
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STMicroelectronics |
STP40NF10L uos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 17 40 25 160 150 1 4 |
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STMicroelectronics |
N-CHANNEL MOSFET TYPE www.DataSheet4U.com STP40N20 Figure 1: Package ID 40 A 40 A 40 A Pw 160 W 160 W 160 W 3 1 2 1 2 3 VDSS 200 V 200 V 200 V RDS(on) < 0.045 Ω < 0.045 Ω < 0.045 Ω STW40N20 STB40N20 ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.038 Ω GATE CHARGE MINIMIZED VE |
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STMicroelectronics |
Power MOSFET Type STB140N10F4 STF140N10F4 STP140N10F4 ■ ■ ■ VDSS 100 V 100 V 100 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ ID 140 A 55 A 3 3 1 2 140 A TO-220FP 1 2 TO-220 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche teste |
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STMicroelectronics |
STB140NF75 Type STB140NF75 STB140NF75-1 STP140NF75 VDSS 75V 75V 75V RDS(on) <0.0075Ω <0.0075Ω <0.0075Ω ID 120A(1) 120A(1) 120A(1) TO-220 1 2 3 3 1 D2PAK 1. Current limited by package ■ 100% avalanche tested 3 12 Description This Power MOSFET is the latest |
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STMicroelectronics |
1200V short circuit rugged IGBT ■ ■ ■ ■ ■ Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with Ultrafast free-wheeling diode 1 2 3 Applications ■ TO-247 Motor control Description This high voltage and short-circuit rugg |
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STMicroelectronics |
N-CHANNEL POWER MOSFET 3 2 1 TO-220FP 12 3 I2PAKFP (TO-281) TO-3PF Order codes STF40N60M2 STFI40N60M2 STFW40N60M2 VDS @ TJmax 650 V RDS(on) max ID 0.088 Ω 34 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche teste |
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STMicroelectronics |
N-channel Power MOSFET Order code STW40N90K5 STWA40N90K5 VDS 900 V RDS(on) max 0.099 Ω ID 40 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applicat |
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STMicroelectronics |
N-channel Power MOSFET Order code STW40N90K5 STWA40N90K5 VDS 900 V RDS(on) max 0.099 Ω ID 40 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applicat |
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STMicroelectronics |
N-CHANNEL MOSFET www.DataSheet4U.com Type VDSS 150V RDS(on) (max) <0.052Ω ID 40A STB40NS15 ■ ■ ■ Exceptional dv/dt capability Gate charge minimized Very low intrinsic capacitances 3 1 D2PAK Applications ■ Switching application Description This Power MOSFET |
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STMicroelectronics |
N-channel Power MOSFET Type STB140NF55 STB140NF55-1 STP140NF55 VDSS 55V 55V 55V 1. Current limited by package RDS(on) <0.008Ω <0.008Ω <0.008Ω ID (1) 80A 80A 80A Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™ |
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STMicroelectronics |
N - CHANNEL STripFET MOSFET Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s H |
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STMicroelectronics |
STP40NF10 RATINGS Symbol VDS VDGR VGS ID(*) ID IDM (l) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100° |
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STMicroelectronics |
STGW40N120KD ■ ■ ■ ■ ■ Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with Ultrafast free-wheeling diode 1 2 3 Applications ■ TO-247 Motor control Description This high voltage and short-circuit rugg |
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