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STMicroelectronics |
N-Channel MOSFET Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N VDS RDS(on) max. 500 V 0.13 Ω ID PTOT 22 A 190 W 35 W 190 W 190 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching a |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N06LFI 60 60 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 |
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STMicroelectronics |
N-channel MOSFET Order codes STB32N65M5 STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 VDSS@ TJmax 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω ID 1 3 3 1 2 24 A 24 A(1) 24 A 24 A 24 A 3 12 D²PAK TO-220FP I²PAK 1. Lim |
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STMicroelectronics |
N-channel MOSFET TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5 • Extremely low R |
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STMicroelectronics |
Automotive-grade N-channel Power MOSFET Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (D |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID TAB STHU32N65DM6AG 650 V 97 mΩ 37 A 7 1 HU3PAK Drain(TAB) • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) x area vs previous generation • Low gate charge, input capacitance and resistance • 1 |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N06LFI 60 60 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 |
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STMicroelectronics |
N-channel MOSFET TAB Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N ■ ■ ■ VDS RDS(on) max. ID PTOT 190 W 35 W 190 W 190 W 2 3 1 3 1 2 D²PAK TAB 500 V 0.13 Ω TO-220FP 22 A 100% avalanche tested Low input capacitance and gate charge Low gate input |
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STMicroelectronics |
N-channel MOSFET TAB Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N ■ ■ ■ VDS RDS(on) max. ID PTOT 190 W 35 W 190 W 190 W 2 3 1 3 1 2 D²PAK TAB 500 V 0.13 Ω TO-220FP 22 A 100% avalanche tested Low input capacitance and gate charge Low gate input |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N05LFI 50 50 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 |
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STMicroelectronics |
N-channel MOSFET TAB Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N ■ ■ ■ VDS RDS(on) max. ID PTOT 190 W 35 W 190 W 190 W 2 3 1 3 1 2 D²PAK TAB 500 V 0.13 Ω TO-220FP 22 A 100% avalanche tested Low input capacitance and gate charge Low gate input |
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STMicroelectronics |
N-channel MOSFET TAB Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N ■ ■ ■ VDS RDS(on) max. ID PTOT 190 W 35 W 190 W 190 W 2 3 1 3 1 2 D²PAK TAB 500 V 0.13 Ω TO-220FP 22 A 100% avalanche tested Low input capacitance and gate charge Low gate input |
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STMicroelectronics |
N-channel MOSFET TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5 • Extremely low R |
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STMicroelectronics |
N-channel MOSFET TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5 • Extremely low R |
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STMicroelectronics |
N-channel MOSFET TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5 • Extremely low R |
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STMicroelectronics |
N-channel Power MOSFET Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (D |
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STMicroelectronics |
STP32N05L c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N05LFI 50 50 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N05LFI 50 50 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 |
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STMicroelectronics |
Power MOSFET Type STK32N4LLH5 ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) max RDS(on)*Qg 40 V < 0.0025 Ω 106.4nC*mΩ Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmark High avalanche ruggedness Fully enc |
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STMicroelectronics |
Power MOSFET Type STK32N4LLF5 ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) max RDS(on)*Qg 40 V < 0.0025 Ω 106.4nC*mΩ Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmark High avalanche ruggedness Fully enc |
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