H32N65DM6 STMicroelectronics N-channel Power MOSFET Datasheet, en stock, prix

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H32N65DM6

STMicroelectronics
H32N65DM6
H32N65DM6 H32N65DM6
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Part Number H32N65DM6
Manufacturer STMicroelectronics (https://www.st.com/)
Description This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the AC...
Features Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A
• AQG 324 qualified
• Half-bridge power module
• 650 V blocking voltage
• Fast recovery body diode
• Very low switching energies
• Low package inductance
• Dice on direct bond copper (DBC) substrate
• Low thermal resistance
• Isolation rating of 3.4 kVrms/min Applications
• Switching applications Description This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers...

Document Datasheet H32N65DM6 Data Sheet
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