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STMicroelectronics |
LCD Display Engines with Integrated DVI/ ADC and YUV Ports s Framelock operation with Safety Mode™ s Serial I²C interface s Low power 0.18 µm process technology 208-pin PQFP Package Product Selector Input Interface Support Product Analog ADE3000 ADE3000T ADE3000SX ADE3000SXT ADE3050 ADE3050T ADE3050SX ADE3 |
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STMicroelectronics |
N-channel Power MOSFET Order code STL320N4LF8 VDS 40 V • MSL1 grade • 175 °C operating temperature • 100% avalanche tested RDS(on) max. 0.8 mΩ ID 360 A Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology feat |
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STMicroelectronics |
240RGB X 320 single chip true 262k color controller/driver ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ One Time Programmable (OTP) non-volatile embedded memory On chip calibration (with OTP Cells) of key configuration and gamma curve parameters. External non-volatile memory (EEPROM) allows storing key configuration parameters a |
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STMicroelectronics |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most |
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STMicroelectronics |
NMOS MICROCONTROLLERS |
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STMicroelectronics |
32 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
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STMicroelectronics |
32 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
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STMicroelectronics |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e |
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STMicroelectronics |
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply - Boot Block - Secure Flash Memories SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ACCESS TIME: 70ns PROGRAMMING TIME: – 10µs typical – Double Word Programming O |
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STMicroelectronics |
MEMS motion sensor ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2.7 V to 3.6 V single supply operation Wide extended operating temperature range (-40°C to +85°C) High stability over temperature Analog absolute angular-rate output Integrated low-pass filters Low power consumption Sleep mode |
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STMicroelectronics |
N-channel Power MOSFET STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET Datasheet — production data Order codes STH320N4F6-2 STH320N4F6-6 VDS RDS(on) max 40 V 1.3 mΩ 1. Current limited by package. ■ |
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STMicroelectronics |
32-Kbit serial SPI bus EEPROM • Compatible with the Serial Peripheral Interface (SPI) bus • Memory array – 32 Kbit (4 Kbytes) of EEPROM – Page size: 32 bytes – Write protection by block: 1/4, 1/2 or whole memory – Additional Write lockable Page (Identification page) • Extended te |
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STMicroelectronics |
M2M automotive-grade secure MCU Hardware features ARM® Cortex® -M3 32-bit RISC core 12 Kbytes of user RAM 512 Kbytes of user Flash memory with OTP area: – 10-year data retention at 105 °C, or 17 years at 85 °C – 500 000 Erase/Write cycles per page – Page granularity of 128 By |
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STMicroelectronics |
N-channel Power MOSFET Order code STL320N4LF8 VDS 40 V • MSL1 grade • 175 °C operating temperature • 100% avalanche tested RDS(on) max. 0.8 mΩ ID 360 A Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology feat |
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STMicroelectronics |
Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main |
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STMicroelectronics |
32 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option – Quadr |
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STMicroelectronics |
32 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option – Quadr |
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STMicroelectronics |
32 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME – 10µs typical – Double Word Programming Option s COMMON |
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STMicroelectronics |
32 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME – 10µs typical – Double Word Programming Option s COMMON |
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STMicroelectronics |
320MHz Single Supply Video Buffer which is very close to GND in single supply. This rail is tested and guaranteed during production at 60mV maximum from GND on a 150Ω load. This allows a good output swing which fits perfectly when driving a video signal on a 75Ω video line. Chapter |
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