| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed t(s) ■ Typical ft = 20 MHz c ■ Fully characterized at 125 oC roduApplications P ■ Audio power amplifier leteDescription soThe device is a NPN transistor manufact |
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STMicroelectronics |
Low voltage high performance PNP power transistor ■ ■ ■ Low collector-emitter saturation voltage High current gain characteristic Fast switching speed 4 3 2 1 Applications ■ ■ DC-DC converter, voltage regulation General purpose switching equipment SOT-89 Description Figure 1. The device is a PN |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a PNP transistor manufactu |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STC5948 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description Figure 1. The device is a PNP transistor |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ 1 2 TO-3 Audio power amplifier Description The device is a PNP transistor manufactured u |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactur |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ Preliminary data High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transist |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ Audio power amplifier TO-264 Description The device is a NPN transistor manufactured us |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ High breakdown voltage VCEO = www.DataSheet4U.com ■ Complementary to 2STW1693 ■ ■ 80 V Typical ft = 20 MHz Fully characterized at 125 oC Applications ■ 3 2 1 Audio power amplifier TO-247 Description The device is a NPN transistor manufactured |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz 3 Application ■ Audio power amplifier 1 2 TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STC5949 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ Audio power amplifier TO-264 Description The device is a PNP transistor manufactured us |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a PNP transistor manufactu |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz 3 Application ■ Audio power amplifier 1 2 TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar T |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactur |
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STMicroelectronics |
NPN Transistor ■ High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz t(s) ■ Fully characterized at 125 oC uc Application rod ■ Audio power amplifier te P Description le The device is a NPN transistor manufactured o using new BiT- |
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STMicroelectronics |
Low voltage fast-switching NPN power bipolar transistors ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting devices in medium power SOT-89 and SOT-223 packages In compliance with the 2002/93/EC European Directive 2 2 3 ■ 1 SOT-8 |
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STMicroelectronics |
Low voltage fast-switching PNP power transistors ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed Applications ■ LED ■ Motherboard & hard disk drive ■ Mobile equipment ■ DC-DC converter Description The devices are PNP transistors manufactured |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ High breakdown voltage VCEO = -80 V ■ Complementary to 2STW4466 ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a PNP transistor manufactured in low voltage planar technology usin |
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STMicroelectronics |
Low voltage NPN power transistor ■ High switching speed ■ Good performances in terms of hFE linearity Application ■ Linear and switching industrial applications Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows high |
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STMicroelectronics |
NPN and PNP complementary transistors Vceo IC(max.) 60 V 0.8 A • Hermetic package • Qualified as per MIL-PRF-M19500/773 • 100 krad HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The JANS2ST3360K is dual complementary (NPN and PNP) bipolar transistor in a single Flat-8 herm |
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