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STMicroelectronics |
HIGH SPEED SWITCHES useful current gain over a u wide range of collector current, low leakage Prod currents and low saturation voltage. TO-18 TO-39 - Obsolete INTERNAL SCHEMATIC DIAGRAM solete Product(s) ABSOLUTE MAXIMUM RATINGS ObSymbol Parameter Value Unit VC |
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STMicroelectronics |
1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS mbient Max Max 58.3 292 TO -18 97.3 437.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEX I BEX Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -0.5V) Base Cut-off |
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STMicroelectronics |
PNP Transistor VCBO IC(max.) 60 V ESCC JANS 0.5 A 0.6 A • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N2907AHR is a silicon planar PNP transistor specifically des |
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STMicroelectronics |
SMALL SIGNAL PNP TRANSISTORS ance Junction-Ambient Max Max 58.3 292 TO -18 97.3 437.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEX I BEX Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -0.5 |
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STMicroelectronics |
Silicon Planar Epitaxial NPN Transistor |
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STMicroelectronics |
SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC UA 2N2484UB 500 (1) 650 (2) 500 (1) V dc 60 60 60 V dc 6 6 6 V dc 60 60 60 mA dc 50 50 50 °C -65 to +200 -65 to +200 -65 to +200 °C/W 325 210 325 °C/W 146 160 146 (1) Derate linearly at 3.08 mW/°C above TA = +37.5°C (2) Derate linearly at 4.7 |
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STMicroelectronics |
Silicon Planar Epitaxial NPN transistor useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIA |
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STMicroelectronics |
Silicon Planar Epitaxial NPN transistor useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIA |
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STMicroelectronics |
Silicon Planar Epitaxial NPN transistor ol I CBO I CES V (BR) CBO Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (V B E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitte |
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STMicroelectronics |
Hi-Rel NPN bipolar transistor BVCEO IC (max) HFE at 10 V - 150 m Operating temperature range ■ ■ ■ ■ ■ 40 V 0.8 A > 100 - 65 °C to + 200 °C Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific |
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STMicroelectronics |
Silicon Planar NPN Transistor Parameter BVCEO min IC (max) hFE at 10 V - 150 mA ESCC JANS 40 V 50 V 0.8 A 100 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose ratee Description The 2N2222AHR is a silicon planar NPN transistor specifically design |
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STMicroelectronics |
SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC UA 2N2484UB 500 (1) 650 (2) 500 (1) V dc 60 60 60 V dc 6 6 6 V dc 60 60 60 mA dc 50 50 50 °C -65 to +200 -65 to +200 -65 to +200 °C/W 325 210 325 °C/W 146 160 146 (1) Derate linearly at 3.08 mW/°C above TA = +37.5°C (2) Derate linearly at 4.7 |
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STMicroelectronics |
SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC UA 2N2484UB 500 (1) 650 (2) 500 (1) V dc 60 60 60 V dc 6 6 6 V dc 60 60 60 mA dc 50 50 50 °C -65 to +200 -65 to +200 -65 to +200 °C/W 325 210 325 °C/W 146 160 146 (1) Derate linearly at 3.08 mW/°C above TA = +37.5°C (2) Derate linearly at 4.7 |
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STMicroelectronics |
EPITAXIAL PLANAR NPN TRANSISTOR |
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STMicroelectronics |
Silicon Planar Epitaxial NPN transistor = 25 °C unless otherwise specified) Symbol I CBO V ( BR) V (BR) V (BR) V ( BR) V CE V BE CBO Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-emitter Bre |
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STMicroelectronics |
HIGH SPEED SWITCHES useful current gain over a u wide range of collector current, low leakage Prod currents and low saturation voltage. TO-18 TO-39 - Obsolete INTERNAL SCHEMATIC DIAGRAM solete Product(s) ABSOLUTE MAXIMUM RATINGS ObSymbol Parameter Value Unit VC |
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STMicroelectronics |
Silicon Planar PNP Transistor mbient Max Max 58.3 292 TO -18 97.3 437.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEX I BEX Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -0.5V) Base Cut-off |
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STMicroelectronics |
Silicon Planar PNP Transistor |
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STMicroelectronics |
SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC UA 2N2484UB 500 (1) 650 (2) 500 (1) V dc 60 60 60 V dc 6 6 6 V dc 60 60 60 mA dc 50 50 50 °C -65 to +200 -65 to +200 -65 to +200 °C/W 325 210 325 °C/W 146 160 146 (1) Derate linearly at 3.08 mW/°C above TA = +37.5°C (2) Derate linearly at 4.7 |
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STMicroelectronics |
Hi-Rel NPN transistor Vceo IC(max.) 50 V • Hermetic packages • ESCC qualified • 100 krad 0.8 A HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure pro |
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