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2N2369 |
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| Part Number | 2N2369 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. ... |
| Features |
= 25 °C unless otherwise specified)
Symbol I CBO V ( BR) V (BR) V (BR) V ( BR) V CE V BE
CBO
Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain
Test Conditions V CB = 20 V V CB = 20 V I C = 10 µA I C = 10 µA I C = 10 mA I E = 10 µA I C = 10 mA I C = 10 mA I B = 1 mA I B = 1 mA T am b = 150 °C
Min.
Typ.
Max. 0.4 30
Unit µA µA V V V V
40... |
| Document |
 2N2369 Data Sheet
PDF 44.04KB |
| Distributor | Stock | Price | Buy |
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