| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-Channel Power MOSFET Order code STP315N10F7 VDS 100 V RDS(on)max 2.7 mΩ ID 180 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) Features Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@Tjmax) RDS(on) max ID 14 A 14 A 14 A(1) 14 A 14 A 3 1 3 12 STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND 650 V 0.299 Ω D2PAK 2 1 3 I²PAK TO-247 3 1 2 1 2 3 1. Limited only by maximum temperature |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STB15N80K5 STF15N80K5 800 V STP15N80K5 STW15N80K5 RDS(on)max 0.375 Ω ID 14 A PTOT 190 W 35 W 190 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener- |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND 650 V 0.299 Ω 14 A 14 A 14 A(1) 14 A 14 A 1. Limited only by maximum temperature allowed ■ The worldwide best RDS(on)* area amongst the fast recover |
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STMicroelectronics |
N-Channel MOSFET Order code STFU15NM65N VDS 650 V RDS(on) max 0.38 Ω ID 12 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications Description This device is an N-channel Power MOSFET dev |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS RDS(on) Max (@Tjmax) 710 V 710 V 710 V 710 V 710 V < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 STB15NM65N STF15NM65N STI15NM65N STP15NM65N STW15NM65N 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω ID 1 3 3 12 STB15NM60N STI15NM60N STF15NM60N STP15NM60N STW15NM60N 14A 14A 14A (1) 14A 14A D²PAK I²PAK TO-247 3 1 2 3 1 2 |
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STMicroelectronics |
N-channel Power MOSFETs Order codes STF15N95K5 3 2 1 VDS RDS(on)max 0.5 Ω ID PTOT 30 W STP15N95K5 STW15N95K5 950 V 12 A 170 W TO-220FP TAB • TO-220 worldwide best RDS(on) • Worldwide best FOM (figure of merit) 3 1 2 • Ultra low gate charge 3 2 1 TO-220 • 100% av |
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STMicroelectronics |
N-Channel Power MOSFET Type VDSS (@Tjmax) RDS(on) ID STB15NM60N STI15NM60N STF15NM60N STP15NM60N STW15NM60N 650V 650V 650V 650V 650V < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω 14A 14A 14A (1) 14A 14A 1. Limited only by maximum temperature allowed ■ 100% avalanc |
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STMicroelectronics |
N-channel Power MOSFET Order code STF15N60M2-EP STFI15N60M2-EP VDS@TJmax 650 V RDS(on)max. 0.378 Ω ID 11 A Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applica |
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STMicroelectronics |
N-channel Power MOSFET Order codes STF15N65M5 STFI15N65M5 STP15N65M5 VDS @ TJmax RDS(on) max ID 710 V < 0.34 Ω 11 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS STD15N50M2AG 500 V RDS(on) max. 0.380 Ω ID PTOT 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-p |
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STMicroelectronics |
N-Channel MOSFET Order code VDS RDS(on) max. ID STL15N60DM6 600 V 372 mΩ 8.5 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt rugge |
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STMicroelectronics |
N-Channel MOSFET rating junction temperature (e) Pulse width limited by safe operating area June 1988 MTP15N06L MTP15N06LFI MTP15N05L MTP15N05LFI 60 50 V 60 50 V ±15 V TO-220 ISOWATT220 15 10 A 9.5 6.3 A 40 40 A 75 30 W 0.6 0.24 W/oC - 65 |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@Tjmax) RDS(on) max ID 14 A 14 A 14 A(1) 14 A 14 A 3 1 3 12 STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND 650 V 0.299 Ω D2PAK 2 1 3 I²PAK TO-247 3 1 2 1 2 3 1. Limited only by maximum temperature |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS (@Tjmax) RDS(on) max ID 14 A 14 A 14 A(1) 14 A 14 A 3 1 3 12 STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND 650 V 0.299 Ω D2PAK 2 1 3 I²PAK TO-247 3 1 2 1 2 3 1. Limited only by maximum temperature |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS STD15NF10T4 100 V • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications RDS(on) max. 65 mΩ ID 23 A Description This Power MOSFET series has been developed using STMicroe |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR on at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP15N05LFI 50 50 ± 15 15 10 60 70 0.47 -65 to 175 175 10 7 60 35 0.23 2000 Unit V V V A A A W W/o C V o o C C |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ion at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value STP15N06LFI 60 60 ± 15 15 10 60 70 0.47 -65 to 175 175 10 7 60 35 0.23 2000 Unit V V V A A A W W/o C V o o C C ( |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ion at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value STP15N06LFI 60 60 ± 15 15 10 60 70 0.47 -65 to 175 175 10 7 60 35 0.23 2000 Unit V V V A A A W W/o C V o o C C ( |
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