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315N10F7 |
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| Part Number | 315N10F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
Order code STP315N10F7
VDS 100 V
RDS(on)max 2.7 mΩ
ID 180 A
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Features
Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster an... |
| Document |
 315N10F7 Data Sheet
PDF 559.79KB |
| Distributor | Stock | Price | Buy |
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