| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epita |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using hi |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using hi |
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STMicroelectronics |
Transil ■ Peak pulse power: – 1500 W (10/1000 μs) – 10 kW (8/20 μs) Stand off voltage range: from 5 V to 188 V Unidirectional and bidirectional types Low leakage current: – 0.2 μA at 25 °C – 1 μA at 85 °C Operating Tj max: 150 °C High power capability at Tj |
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STMicroelectronics |
NPN power transistor ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epit |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epit |
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STMicroelectronics |
3.3V AND ADJUSTABLE VOLTAGE REGULATORS s s s s s s s s Output currents up to 750mA for STV8130A and up to 200mA for STV8130B Fixed precision output 1 voltage 3.3V ± 2% Output 2 voltage programmable from 2.8V to 16V Output 1 with reset facility Output 2 with disable by TTL input Short c |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ STI13005-1 is opposite pin out versus standard IPAK package ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Application ■ Switch mode power supplies (AC-DC converters) IPAK 3 2 1 Description The device is |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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STMicroelectronics |
STW13009 ■ ■ ■ ■ Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 1 Application ■ Switch mode power supplies TO-247 Description The device is manufactured using high vo |
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STMicroelectronics |
very fast IGBT ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 1 3 1 3 2 2 Applications ■ ■ Induction cooking, microwave ovens Soft-switching applications TO-247 TO-3P Desc |
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STMicroelectronics |
600W TVS • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 150 °C • High power capability |
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STMicroelectronics |
Wideband RF/microwave PLL fractional/integer frequency synthesizer • Output frequency range: 1.925 GHz to 16 GHz – RF out 1 (VCO, VCO÷2): 1.925-8.0 GHz – RF out 2 (VCO x 2): 7.7-16.0 GHz • Very low noise – Normalized phase noise floor: -227 dBc/Hz – VCO phase noise (6.0 GHz): -131 dBc/Hz @ 1 MHz offset – Noise floor |
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STMicroelectronics |
TRANSIL ■ Peak pulse power: 600 W (10/1000 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline Description The SMBJ series are TRANSIL™ diodes designed s |
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STMicroelectronics |
ST13007N 16 4 8 80 -65 to 150 150 33 Uni t V V V A A A A W o o C C March 1999 1/7 Free Datasheet http://www.datasheet4u.net/ ST13007N / ST13007NFP THERMAL DATA T O- 220 R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junctio |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamp (CFL) ■ Switch mode power supplies (AC-DC converters) Description The |
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STMicroelectronics |
N-Channel MOSFET 7$% Type VDS RDS(on) max. ID STB130NS04ZB-1 Clamped 9 mΩ 80 A ,3$. Figure 1. Internal schematic diagram • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low capacitance and gate charge • 175°C max |
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STMicroelectronics |
Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main |
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STMicroelectronics |
NPN power transistor ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epit |
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STMicroelectronics |
NPN power transistor ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epit |
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