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B130NS04ZB |
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| Part Number | B130NS04ZB |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra ... |
| Features |
7$%
Type
VDS
RDS(on) max.
ID
STB130NS04ZB-1 Clamped 9 mΩ
80 A
,3$.
Figure 1. Internal schematic diagram
• Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low capacitance and gate charge • 175°C maximum junction temperature Applications • High switching current • Linear applications Description This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly... |
| Document |
 B130NS04ZB Data Sheet
PDF 515.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | B130 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 2 | B130 |
EIC |
SCHOTTKY BARRIER RECTIFIER |
|
| 3 | B130-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |
|
| 4 | B130-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |
|
| 5 | B1301 |
Renesas |
PNP SIlicon Transistor |
|