| No. | Partie # | Fabricant | Description | Fiche Technique |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS |
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ST Microelectronics |
STU14NA50 |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS |
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STMicroelectronics |
Wideband RF/microwave PLL fractional/integer frequency synthesizer • Output frequency range: 1.925 GHz to 16 GHz – RF out 1 (VCO, VCO÷2): 1.925-8.0 GHz – RF out 2 (VCO x 2): 7.7-16.0 GHz • Very low noise – Normalized phase noise floor: -227 dBc/Hz – VCO phase noise (6.0 GHz): -131 dBc/Hz @ 1 MHz offset – Noise floor |
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STMicroelectronics |
N-channel Power MOSFET ( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 |
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STMicroelectronics |
Power MOSFET Order codes VDSS (@Tjmax) RDS(on) max ID STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V < 0.45 Ω 10 A 10 A(1) 10 A 10 A 10 A 1. Limited only by maximum temperature allowed ■ The worldwide best RDS(on)* area amongst the fast |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 20A R DS(ON) (m Ω) Max 28 @ VGS=10V 38 @ VGS=4.5V G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS |
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STMicroelectronics |
N-channel Power MOSFET Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDS RDS(on) max STD2N105K5 STP2N105K5 1050 V 8Ω STU2N105K5 ID 1.5 A PTOT 60 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applicatio |
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STMicroelectronics |
USB Transceiver ■ Compliant to USB V2.0 for full-speed (12Mb/s) and low-speed (1.5Mbps) operation = ±14kV on D+, D – lines; ±5kV on VBUS ESD Compliant to IEC-61000-4.2 (level 3) on D+, D- lines Separate I/O supply with operation down to 1.6V Integrated 3.3V output L |
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STMicroelectronics |
N-channel Power MOSFET D ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T o |
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ST Microelectronics |
N-Channel Power MOSFET TAB Order code VDS RDS(on) max. ID STU10NM60N 600 V 550 mΩ 10 A 3 2 1 • 100% avalanche tested • Low input capacitance and gate charge IPAK • Low gate input resistance D(2, TAB) Applications • Switching applications G(1) S(3) Descri |
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STMicroelectronics |
STU16NB50 j Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Fa |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor ( m W ) Max ID 50A RDS(ON) Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. D 9 @ VGS = 10V D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor ise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.5V, ID= 6A V |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 Package. ID 12A R DS(ON) (m Ω) Max 140 @ VGS=10V 245 @ VGS=4.5V G S STU SERIES TO - 252AA( D - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS V |
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SamHop Microelectronics |
P-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S STU SERIES TO - 252AA( D - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STD11N65M2 STP11N65M2 650 V 0.68 Ω 7A STU11N65M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected PTOT 85 W Package DPAK TO-220 IPAK Appli |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS |
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