| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
STD65NF06 Type STD65NF06 STP65NF06 ■ ■ VDSS 60V 60V RDS(on) <14mΩ <14mΩ ID 60A 60A 3 1 1 2 3 Standard level gate drive 100% avalanche tested DPAK TO-220 Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature |
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SamHop Microelectronics |
STD2030PLS R JC R JA 3 50 C /W C /W S T U/D2030P LS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = -250uA V DS = |
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STMicroelectronics |
STD9NM60N Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description This seri |
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ST Microelectronics |
STD60NF06 Type STD60NF06 ■ ■ ■ VDSS 60V RDS(on) <0.016Ω ID 60A Exceptional dv/dt capability Application oriented characterization 100% avalanche tested DPAK 3 1 Description This Power Mosfet series realized with STMicroelectronics unique STripFET process |
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ST Microelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
N-CHANNEL Power MOSFET s allowing system miniaturization and higher efficiencies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- |
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STMicroelectronics |
STD85N3LH5 www.DataSheet4U.com Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS 30 V 30 V 30 V RDS(on) max < 0.005 Ω < 0.0054 Ω < 0.0054 Ω ID 80 A 80 A 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low |
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ST Microelectronics |
STD30NF06L Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMAT |
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STMicroelectronics |
STD3NB50 tot dv/dt( 1 ) T stg Tj May 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissip |
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STMicroelectronics |
N-CHANNEL MOSFET Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATI |
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STMicroelectronics |
N-channel Power MOSFET Type STD20NF20 STF20NF20 STP20NF20 ■ ■ ■ VDSS RDS(on) ID 18 A 18 A 18 A PW 110 W 30 W 110 W 1 3 2 200 V < 0.125 Ω 200 V < 0.125 Ω 200 V < 0.125 Ω 3 1 2 TO-220FP TO-220 Exceptional dv/dt capability Low gate charge 100% avalanche tested 1 3 D |
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STMicroelectronics |
N-CHANNEL MOSFET Type STD100N03L STD100N03L-1 ■ ■ ■ Package ID Pw VDSSS 30 V 30 V RDS(on) <0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W 3 1 1 3 2 100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD DPAK IPAK Description This MOSFET is |
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STMicroelectronics |
P-CHANNEL MOSFET Order code VDSS RDS(on)max ID PTOT STD3PK50Z 500 V < 4Ω 2.8 A 70 W ■ Gate charge minimized ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Very low intrinsic capacitance ■ Improved ESD capability Applications ■ Switching applications |
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STMicroelectronics |
Adaptive 3.4 Gbps 3:1 TMDS/HDMI signal equalizer ■ Digital video signal equalizer with 3:1 HDMI switch ■ Compatible with the high-definition multimedia interface (HDMI) v1.3 digital interface ■ 340 MHz maximum clock speed operation supports all video formats with deep color at maximum refresh rates |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS@ TJmax STD5N60M2 STP5N60M2 650 V STU5N60M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected RDS(on) max. 1.4 Ω ID 3.5 A Applications • Switching applications |
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STMicroelectronics |
N-channel Power MOSFET Order code STD6N90K5 VDS 900 V RDS(on) max. 1.10 Ω ID 6A Figure 1: Internal schematic diagram Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applicatio |
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STMicroelectronics |
N-channel MOSFET Type STD96N3LLH6 VDSS 30 V RDS(on) max 0.0042 Ω ID 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications – Automotive Descrip |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS RDS(on) max. ID STD8N60DM2 600 V 600 mΩ 8A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected PTOT 85 W |
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ST Microelectronics |
N-CHANNEL MOSFET at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 2 1.3 8 60 0.48 4 –65 to 150 150 Unit V V V A A A W W/°C V |
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ST Microelectronics |
N-CHANNEL MOSFET (*) ID IDM( •) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total |
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