| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
Transistors ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20015- |
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ST Microelectronics |
Transistors ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V BeO free package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD20015C is a co |
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ST Microelectronics |
Transistors ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20015- |
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ST Microelectronics |
RF Power Transistor ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20010- |
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