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PD20015C |
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| Part Number | PD20015C |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The PD20015C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6... |
| Features |
■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V BeO free package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD20015C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD20015C’s superior... |
| Document |
 PD20015C Data Sheet
PDF 182.73KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PD20015-E |
ST Microelectronics |
Transistors |
|
| 2 | PD20015S-E |
ST Microelectronics |
Transistors |
|
| 3 | PD20010-E |
ST Microelectronics |
RF Power Transistor |
|
| 4 | PD20012 |
Nihon Inter Electronics |
Diode |
|
| 5 | PD20016 |
Nihon Inter Electronics |
Diode |
|