| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
STP7NC70ZF OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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Silan Microelectronics |
600V DP MOS POWER TRANSISTOR 7A,600V, RDS(on)(typ.)=0.48@VGS=10V New revolutionary high voltage technology Ultra low gate charge Enhanced avalanche capability Extreme dv/dt rated High peak current capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3 |
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ST Microelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP7NK40ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP7NC80ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
STP7NB60FP Tj March 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 |
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Silan Microelectronics |
600V DP MOS POWER TRANSISTOR 7A,600V, RDS(on)(typ.)=0.48@VGS=10V New revolutionary high voltage technology Ultra low gate charge Enhanced avalanche capability Extreme dv/dt rated High peak current capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3 |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET |
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ST Microelectronics |
N-CHANNEL MOSFET ain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation |
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ST Microelectronics |
N-Channel MOSFET Order code VDS RDS(on) max. ID STP7NK40ZFP 400 V 1Ω ) 3 t(s 2 1 c TO-220FP du D(2) • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Pro Applications 5.4 A te G(1) • Switching applications |
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STMicroelectronics |
IGBT TYPE VCES VCE(sat) (Max) IC @25°C @100°C STGP7NC60H 600 V STGD7NC60HT4 600 V < 2.5 V < 2.5 V 14 A 14 A s LOWER ON-VOLTAGE DROP (Vcesat) s OFF LOSSES INCLUDE TAIL CURRENT s LOWER CRES/CIES RATIO s HIGH FREQUENCY OPERATION UP TO 70 KHz s NEW |
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Silan Microelectronics |
700V DP MOS POWER TRANSISTOR 7A, 700V, RDS(on)(typ.)=0.52@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability NOMENCLATURE 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 2 |
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STMicroelectronics |
N-Channel MOSFET TAB TO-220 1 23 D(2, TAB) Order code VDS STP7NK40Z 400 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications RDS(on) max. 1Ω ID 5.4 A • Switching applications G(1) Description |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET |
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ST Microelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
N-CHANNEL MOSFET ain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation |
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ST Microelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
STP7NC80Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
STP7NB60FP Tj March 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 |
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ST Microelectronics |
N-Channel MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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