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P7NB60 |
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| Part Number | P7NB60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Co... |
| Features |
Tj March 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. O perating Junction Temperature
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value ST P7NB60 STP7NB60FP 600 600 ± 30 7.2 4.5 28.8 125 1.0 4.5 -65 to 150 150
(1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t V V V 4.... |
| Document |
 P7NB60 Data Sheet
PDF 143.14KB |
| Distributor | Stock | Price | Buy |
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