| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 600 V 3.6 Ω STP3NK60Z STP3NK60ZFP • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected ID 2.4 A |
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STMicroelectronics |
N-channel Power MOSFET Type STF3NK100Z STP3NK100Z STD3NK100Z ■ ■ ■ ■ ■ VDSS 1000V 1000V 1000V RDS(on) Max < 6Ω < 6Ω < 6Ω ID 2.5A 2.5A 2.5A PTOT 25W 90W 90W TO-220 1 2 1 3 2 3 TO-220FP Extremely high dv/dt capability 3 100% avalanche tested Gate charge minimized Ve |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR g Junction Temperature o o Value STP3N100FI 1000 1000 ± 20 3.5 2 14 100 0.8 -65 to 150 150 2 1.2 14 40 0.32 2000 Unit V V V A A A W W/o C V o o C C ( •) Pulse width limited by safe operating area December 1996 1/10 www.DataSheet.in STP3N100 |
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STMicroelectronics |
N-Channel MOSFET TAB 3 2 1 TO-220 Order code STP3NK50Z VDS RDS(on)max. ID 500 V 3.3 Ω 2.3 A • Extremely high dv/dt capability • ESD improved capability • 100% avalanche tested • Gate charge minimized • Zener-protected PTOT 45 W Figure 1. Internal schematic diag |
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ST Microelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-CHANNEL Power MOSFET TAB TO-220 1 23 D(2, TAB) Order code VDS STP3NK80Z 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications RDS(on) max. 4.5 Ω ID 2.5 A • Switching applications G(1) Descriptio |
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STMicroelectronics |
N-Channel MOSFET TAB TO-220 1 23 Order code VDS RDS(on) max. ID STP3NK90Z 900 V 4.8 Ω 3A • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected D(2, TAB) Applications • Switching applications G(1) Description |
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STMicroelectronics |
STP3NA80FI P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C De |
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STMicroelectronics |
N-channel Power MOSFET TAB Order code VDS RDS(on)max. ID Package TAB t(s) 3 1 c D2PAK TO-220 1 23 Produ D(2, TAB) olete G(1) - Obs S(3) AM01475V1 roduct(s) Product status link te P STB3N62K3 Obsole STP3N62K3 STB3N62K3 STP3N62K3 620 V 2.5 Ω • 100% avalanch |
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ST Microelectronics |
STP3NB80 ID I DM ( • ) P tot dv/dt( 1 ) VISO Tstg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Facto |
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STMicroelectronics |
N-Channel MOSFET Order code STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z VDS 800 V 800 V 800 V 800 V RDS(on) max. 4.5 Ω 4.5 Ω 4.5 Ω 4.5 Ω ID 2.5 A 2.5 A 2.5 A 2.5 A Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected |
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STMicroelectronics |
STP3NA90FI ge T emperature Tj Max Operating Junction Temperature ( •)Pulse width limited by safe operating area March 1996 Value STP3NA90 S TP3NA 90F I 900 900 ± 30 3 1.9 2 1.2 12 12 100 40 1.25 0 .3 2 - 2000 -65 to 150 150 Unit V V V A A A W W/ |
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STMicroelectronics |
STP3NA60 at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) |
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STMicroelectronics |
N-channel Power MOSFET TAB 3 2 1 TO-220 Order code STP3NK50Z VDS RDS(on)max. ID 500 V 3.3 Ω 2.3 A • Extremely high dv/dt capability • ESD improved capability • 100% avalanche tested • Gate charge minimized • Zener-protected PTOT 45 W Figure 1. Internal schematic diag |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS RDS(on) max. ID STP3NK90ZFP 900 V 4.8 Ω 3A 3 2 1 TO-220FP D(2) • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications G(1) • Switching applications Description Thi |
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ST Microelectronics |
N-CHANNEL IGBT (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 oC Collector Current (continuous) at Tc = 100 oC Collector Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Storage T emperature Max. O perating Junct ion T |
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ST Microelectronics |
N-CHANNEL IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN |
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ST Microelectronics |
STP3NB60FP j March 1998 Drain-source Voltage (V GS = 0) Gate-source Voltage Drain- gate Voltage (R GS = 20 k Ω ) Drain Current (continuous) at T c = 25 C o m o .c U 4 t e e h S a t a .D w w w 3 1 2 3 2 1 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Para |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 800 V RDS(on) max. 3.5 Ω ID 2.5 A PTOT 60 W 20 W 60 W Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-pr |
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