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ST Microelectronics M29 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
LM2903

STMicroelectronics
Low-power dual voltage comparator

• Wide single supply voltage range or dual supplies +2 V to +36 V or ±1 V to ±18 V
• Very low supply current (0.4 mA) independent of supply voltage (1 mW/comparator at +5 V)
• Low input bias current: 25 nA typ.
• Low input offset current: ±5 nA typ.
Datasheet
2
29F400T

STMicroelectronics
M29F400T
asymmetrically blocked architecture providing system memory integration. Both M29F400T and M29F400B devices have an array of 11 blocks, one Boot Block of 16 KBytes or 8 KWords, two Parameter Blocks of 8 KBytes or 4 KWords, one Main Block of 32 KBytes
Datasheet
3
LM2901

STMicroelectronics
Low-power quad voltage comparator

• Wide single supply voltage range or dual supplies for all devices: +2 V to +36 V or ±1 V to ±18 V
• Very low supply current (1.1 mA) independent of supply voltage (1.4 mW/comparator at +5 V)
• Low input bias current: 25 nA typ.
• Low input offset c
Datasheet
4
M29F080A

ST Microelectronics
8 Mbit 1Mb x8 / Uniform Block Single Supply Flash Memory
3 A2 A1 A0 DQ0 DQ1 DQ2 DQ3 VSS VSS 1 44 2 43 3 42 4 41 5 40 6 39 7 38 8 37 9 36 10 35 11 34 M29F080A 12 33 13 32 14 31 15 30 16 29 17 28 18 27 19 26 20 25 21 24 22 23 AI00521B A19 A18 A17 A16 A15 A14 A13 A12 E VCC NC RP A11 A10 A9 A8 A7 A6 A5 A4 1
Datasheet
5
LM2904

STMicroelectronics
Low-power dual operational amplifier
DFN8 2x2 DFN8 2x2 wettable flanks MiniSO8 TSSOP8 SO8
• Frequency compensation implemented internally
• Large DC voltage gain: 100 dB
• Wide bandwidth (unity gain): 1.1 MHz (temperature compensated)
• Very low supply current/amplifier, essenti
Datasheet
6
M29F400BB

STMicroelectronics
4-Mbit Single Supply Flash Memory
M) Figure 1. Logic Diagram VCC 18 A0-A17 15 DQ0-DQ14 W DQ15A
  –1 M29F400BT E M29F400BB BYTE G RB RP VSS AI02904 July 2000 1/22 M29F400BT, M29F400BB Figure 2. TSOP Connections A15 1 48 A16 A14 BYTE A13 VSS A12 DQ15A
  –1 A11 DQ
Datasheet
7
LM2902H

STMicroelectronics
Low Power Quad Operational Amplifier

■ Wide gain bandwidth: 1.3 MHz
■ Extended temperature range: -40°C to +150°C
■ Input common-mode voltage range includes ) negative rail t(s
■ Large voltage gain: 100 dB uc
■ Very low supply current: 0.7 mA d
■ Low input bias current: 20 nA ro
■ Lo
Datasheet
8
M29W512B

ST Microelectronics
512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
3 DQ4 DQ5 DQ6 AI02755 1 32 8 9 M29W512B 25 24 16 17 AI02976 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 Table 1. Signal Names A0-A15 DQ0-DQ7 E G W VCC VSS NC Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enab
Datasheet
9
LM2903H

ST Microelectronics
LOW POWER DUAL VOLTAGE COMPARATORS
Range -40°C, +150°C -40°C, +150°C Package Wafer

• SO8 Wafer form PIN CONNECTIONS (top view) 1 2 3 4 + + 8 7 6 5 D = Small Outline Package (SO) - also available in Tape & Reel (DT) September 2003 . 1/5 LM2903H SCHEMATIC DIAGRAM (1/2 LM2903)
Datasheet
10
LM2901B

STMicroelectronics
low-power quad voltage comparator

• AEC-Q100 qualified
• Wide single supply voltage range or dual supplies +2 V to +36 V or ±1 V to ±18 V
• Very low supply current 1 mA (typ., all channels), essentially independent of supply voltage
• Low input bias current: 20 nA typ.
• Low input of
Datasheet
11
M29F002BT

ST Microelectronics
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
is not available. 3/22 M29F002BT, M29F002BB, M29F002BNT Table 3A. M29F002BT, M29F002BNT Block Addresses Size (Kbytes) 16 8 8 32 64 64 64 Address Range 3C000h-3FFFFh 3A000h-3BFFFh 38000h-39FFFh 30000h-37FFFh 20000h-2FFFFh 10000h-1FFFFh 00000h-0FFFFh
Datasheet
12
29F200BB

STMicroelectronics
M29F200BB
O44 (M) Figure 1. Logic Diagram VCC 17 A0-A16 15 DQ0-DQ14 W DQ15A
  –1 M29F200BT E M29F200BB BYTE G RB RP VSS AI02912 October 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject
Datasheet
13
LM2904AH

STMicroelectronics
dual operational amplifier
DFN8 2 x 2 wettable flanks TSSOP8 Maturity status link LM2904H LM2904AH Related products LM2904WH For enhanced ESD performances
• AEC-Q100 qualified
• Frequency compensation implemented internally
• Large DC voltage gain: 100 dB
• Wide bandw
Datasheet
14
M29W116BB

STMicroelectronics
16 Mbit Low Voltage Single Supply Flash Memory
20mm Figure 1. Logic Diagram VCC 21 A0-A20 8 DQ0-DQ7 W E M29W116BT M29W116BB G RB RP VSS AI02972 July 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change withou
Datasheet
15
M29F100B

ST Microelectronics
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory
asymmetrically blocked architecture providing system memory integration. Both M29F100T and M29F100B devices have an array of 5 blocks, one Boot Block of 16 KBytes or 8 KWords, two Parameter Blocks of 8 KBytes or 4 KWords, one Main Block of 32 KBytes
Datasheet
16
M29W004B

ST Microelectronics
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory
asymmetrically blocked architecture providing system memory integration. Both M29W004T and M29W004B devices have an array of 11 blocks, one Boot Block of 16K Bytes, two Parameter Blocks of 8K Bytes, one Main Block of 32K Bytes and seven Main Blocks o
Datasheet
17
M29W160BB

ST Microelectronics
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory
RASE CYCLES per BLOCK 20 YEARS DATA RETENTION
  – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE
  – Manufacturer Code: 0020h
  – Top Device Code M29W160BT: 22C4h
  – Bottom Device Code M29W160BB: 2249h s s VSS AI00981 Note: RB not available on SO44 p
Datasheet
18
M29W800DB

ST Microelectronics
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory
SUMMARY s SUPPLY VOLTAGE
  – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 70, 90ns PROGRAMMING TIME
  – 10µs per Byte/Word typical 19 MEMORY BLOCKS
  – 1 Boot Block (Top or Bottom Location)
  – 2 Parameter and 16 Main
Datasheet
19
29W320DB

ST Microelectronics
M29W320DB
SUMMARY s SUPPLY VOLTAGE
  – VCC = 2.7V to 3.6V for Program, Erase and Read
  – VPP =12V for Fast Program (optional) s ACCESS TIME: 70, 90ns s PROGRAMMING TIME
  – 10µs per Byte/Word typical s 67 MEMORY BLOCKS
  – 1 Boot Block (Top or Bottom Location)
  – 2 Pa
Datasheet
20
LM2903D

STMicroelectronics
Low-power dual voltage comparator

• Wide single supply voltage range or dual supplies +2 V to +36 V or ±1 V to ±18 V
• Very low supply current (0.4 mA) independent of supply voltage (1 mW/comparator at +5 V)
• Low input bias current: 25 nA typ.
• Low input offset current: ±5 nA typ.
Datasheet



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