M29F100B |
Part Number | M29F100B |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Pr... |
Features |
yte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.
July 1998
44
1
TSOP48 (N) 12 x 20 mm
SO44 (M)
Figure 1. Logic Diagra... |
Document |
M29F100B Data Sheet
PDF 207.88KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | M29F100BB |
ST Microelectronics |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory | |
2 | M29F100BT |
ST Microelectronics |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory | |
3 | M29F100T |
ST Microelectronics |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory | |
4 | M29F102BB |
ST Microelectronics |
1 Mbit 64Kb x16 / Boot Block Single Supply Flash Memory | |
5 | M29F160 |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory |