| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
NPN Transistor ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The |
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ST Microelectronics |
NPN MEDIUM POWER TRANSISTOR ■ High current ■ Low saturation voltage ■ Complement to 2SB772 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter Description The device is a NPN transistor manufactured by using planar technol |
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STMicroelectronics |
NPN Silicon Power Transistor CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) IEBO Emitter Cut-off Current (IC = 0) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) VCE(sat)∗ Colle |
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