2SD1047 |
Part Number | 2SD1047 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. ... |
Features |
■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SD1047 April 2011 Marking 2SD1047 Package TO-3P Doc ID 018729 Rev 1 Packaging Tube 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter V... |
Document |
2SD1047 Data Sheet
PDF 159.12KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | 2SD1040 |
INCHANGE |
NPN Transistor | |
2 | 2SD1044 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor | |
3 | 2SD1046 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SD1046 |
INCHANGE |
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5 | 2SD1046 |
SavantIC |
SILICON POWER TRANSISTOR |