ST Microelectronics 25P fiche technique

No.	Partie #	Fabricant	Description
1	25P10VP	STMicroelectronics	M25P10 of the device are summarized in Table 3. Figure 4. Hold Condition Activation CLOCK HOLD PIN MEMORY STATUS ACTIVE HOLD ACTIVE HOLD ACTIVE AI02029B 3/21 M25P10 Figure 5. M25P10-Compatible SPI Modes CPOL CPHA 00 C 11 C D or Q MSB LSB AI
2	25P40VP	STMicroelectronics	Serial Flash Memory SUMMARY s 4 Mbit of Flash Memory s Page Program (up to 256 Bytes) in 1.5ms (typical) s Sector Erase (512 Kbit) in 2 s (typical) s Bulk Erase (4 Mbit) in 5 s (typical) s 2.7 V to 3.6 V Single Supply Voltage s SPI Bus Compatible Serial Interface s 25 M
3	25P10	STMicroelectronics	1 Mbit Low Voltage Paged Flash Memory of the device are summarized in Table 3. Figure 4. Hold Condition Activation CLOCK HOLD PIN MEMORY STATUS ACTIVE HOLD ACTIVE HOLD ACTIVE AI02029B 3/21 M25P10 Figure 5. M25P10-Compatible SPI Modes CPOL CPHA 00 C 11 C D or Q MSB LSB AI
4	25P10AV	ST Microelectronics	M25P10AV ■ 1 Mbit of Flash memory www.DataSheet4U.com ■ Page Program (up to 256 bytes) in 1.4 ms (typical) ■ ■ ■ ■ ■ ■ ■ Sector Erase (256 Kbit) in 0.65 s (typical) Bulk Erase (1 Mbit) in 1.7 s (typical) 2.3 to 3.6 V single supply voltage SPI bus compatibl
5	25P40	ST Microelectronics	M25P40 SUMMARY s 4 Mbit of Flash Memory s Figure 1. Packages Page Program (up to 256 Bytes) in 1.5ms (typical) Sector Erase (512 Kbit) in 2 s (typical) (4 Mbit) in 5 s (typical) 2.7 V to 3.6 V Single Supply Voltage SPI Bus Compatible Serial Interface 25 M
6	M25PX32	STMicroelectronics	serial Flash memory ■ ■ ■ ■ SPI bus compatible serial interface 75 MHz (maximum) clock frequency 2.7 V to 3.6 V single supply voltage Dual input/output instructions resulting in an equivalent clock frequency of 150 MHz: – Dual Output Fast Read instruction – Dual Input
7	LDR1825PT-R	STMicroelectronics	VERY LOW DROP DUAL VOLTAGE REGULATOR The very low drop-voltage Figure 1: Block Diagram VI1 POWER 1 (0.5V) and the very low supply current make it particularly suitable for low noise and low power applications such as PDA, MICRODRIVE and other data storage applications while the used h
8	M25P05-A	STMicroelectronics	512 Kbit/ Low Voltage/ Serial Flash Memory SUMMARY s 512 Kbit of Flash Memory s Figure 1. Packages Page Program (up to 256 Bytes) in 1.5ms (typical) Sector Erase (256 Kbit) in 2 s (typical) Bulk Erase (512 Kbit) in 3 s (typical) 2.7 V to 3.6 V Single Supply Voltage SPI Bus Compatible Serial
9	M25P10-A	STMicroelectronics	1 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface SUMMARY s 1 Mbit of Flash Memory s Figure 1. Packages Page Program (up to 256 Bytes) in 1.5ms (typical) Sector Erase (256 Kbit) in 2 s (typical) Bulk Erase (1 Mbit) in 3 s (typical) 2.7 V to 3.6 V Single Supply Voltage SPI Bus Compatible Serial Int
10	M25PE10	ST Microelectronics	(M25PE10 / M25PE20) Page-Erasable Serial Flash Memories SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Industrial Standard SPI Pin-out 1 or 2 Mbit of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) in 1.2ms (typical) Page Erase (256 Bytes) in 10ms (typical
11	25P05	STMicroelectronics	M25P05 SUMMARY This device is now designated as “Not for New Design”. Please use the M25P05-A in all future designs (as described in application note AN1511). s 512 Kbit of Flash Memory s Figure 1. Packages Page Program (up to 128 Bytes) in 3 ms (typical)
12	M25P05	STMicroelectronics	512 Kbit/ Low Voltage/ Serial Flash Memory SUMMARY This device is now designated as “Not for New Design”. Please use the M25P05-A in all future designs (as described in application note AN1511). s 512 Kbit of Flash Memory s Figure 1. Packages Page Program (up to 128 Bytes) in 3 ms (typical)
13	M25P10	STMicroelectronics	1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface of the device are summarized in Table 3. Figure 4. Hold Condition Activation CLOCK HOLD PIN MEMORY STATUS ACTIVE HOLD ACTIVE HOLD ACTIVE AI02029B 3/21 M25P10 Figure 5. M25P10-Compatible SPI Modes CPOL CPHA 0 0 C 1 1 C D or Q MSB
14	M25P16	STMicroelectronics	16-Mbit Low Voltage Serial Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 16Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (512 Kbit) Bulk Erase (16Mbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate (maximum) Deep
15	M25P128	ST Microelectronics	128 Mbit (Multilevel) Low Voltage Serial Flash Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 4.2 4.3 Page programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Sector Erase and Bulk Erase . . . . . . . . . . .
16	M25PE40	ST Microelectronics	Page-Erasable Serial Flash memory ■ ■ ■ SPI bus compatible serial interface 4 Mbit Page-Erasable Flash memory Page size: 256 bytes – Page Write in 11 ms (typical) – Page Program in 0.8 ms (typical) – Page Erase in 10 ms (typical) SubSector Erase (4 Kbytes) Sector Erase (64 Kbytes) B
17	M25PE80	ST Microelectronics	Page-Erasable Serial Flash memory ■ ■ ■ SPI bus compatible serial interface 8-Mbit Page-Erasable Flash memory Page size: 256 bytes – Page Write in 11 ms (typical) – Page Program in 0.8 ms (typical) – Page Erase in 10 ms (typical) SubSector Erase (4 Kbytes) Sector Erase (64 Kbytes) B
18	M25PXX	STMicroelectronics	Serial Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 512Kbit to 32Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (256 Kbit or 512Kbit) Bulk Erase (512Kbit to 32Mbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interfac
19	25P20VP	STMicroelectronics	Serial Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 512Kbit to 32Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (256 Kbit or 512Kbit) Bulk Erase (512Kbit to 32Mbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interfac
20	ESDA25P35-1U1M	STMicroelectronics	High power transient voltage suppressor  Low clamping voltage  Typical peak pulse power: 1400 W (8/20 µs)  Stand-off voltage 22 V  Unidirectional diode  Low leakage current: 0.2 µA at 25 °C  Complies with IEC 61000-4-2 level 4  ±30 kV (air discharge)  ±30 kV (contact discharge) App