| No. | Partie # | Fabricant | Description | Fiche Technique |
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Rohm |
2SD1944 |
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Rohm |
2SD1918 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V 4) Lead Free/RoHS Compliant. lOutline CPT3 Collector Base Emitter 2SD1918 (SC-63) |
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Rohm |
High-current gain Power Transistor |
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Rohm |
Medium Power Transistor 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-217-B24) |
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Rohm |
2SD1929 |
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Rohm |
2SD1933 |
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Rohm |
Power Transistor 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V 4) Lead Free/RoHS Compliant. lOutline CPT3 Collector Base Emitter 2SD1918 (SC-63) |
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Rohm |
Transistor |
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ROHM Electronics |
(2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor |
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Rohm |
2SD1960 |
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Rohm |
2SD1980 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. inner circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter Absolute max |
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Rohm |
Medium Power Transistor 1)High current. (IC=0.5A) 2)Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lOutline SOT-323 SOT-346 2SD1949 (UMT3) 2SD1484K (SMT3) lInner circuit lApplication LOW FREQUENCY AMPLIFIER, DRIVER lPackaging spec |
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Rohm |
Power Transistor 1) Low saturation voltage, typically www.DataSheet4U.com VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) ( |
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Rohm |
Power Transistor 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. inner circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter Absolute max |
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Rohm |
Step-up DC/DC converter nd deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM |
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ROHM Electronics |
2SD1961 |
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ROHM Electronics |
(2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor |
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ROHM Electronics |
2SD1963 1) Low saturation voltage, typically www.DataSheet4U.com VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) ( |
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Rohm |
NPN Silicon Transistor |
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Rohm |
Silicon monolithic IC voltage VVDCO3 Input terminal voltage (*1) VIN DCSW1 terminal output current (*2) IDCSW1 DCSW2 terminal output current (*2) IDCSW2 DCSW3 terminal output current (*2) IDCSW3 VDCO3 terminal output current (*2) IVDCO3 CSWO terminal output current ICSWO |
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