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2SD1963 |
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| Part Number | 2SD1963 |
| Manufacturer | ROHM (https://www.rohm.com/) |
| Description | 2SD1963 Transistors Power transistor (50V, 3A) 2SD1963 zFeatures 1) Low saturation voltage, typically www.DataSheet4U.com VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current g... |
| Features |
1) Low saturation voltage, typically www.DataSheet4U.com VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
(1)
(2)
(3)
1.0
2.5 4.0
0.4
0.4 1.5
0.5 1.5 3.0
0.4
(1)Base (2)Collector (3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 50 20 6 3 5 0.5 2.0 150 −55 to 150 Unit V V V A(DC) A(Pulse) W W
∗1 ∗2
Collector power dissipation ... |
| Document |
 2SD1963 Data Sheet
PDF 94.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1960 |
Rohm |
NPN Silicon Transistor |
|
| 2 | 2SD1961 |
ROHM Electronics |
(2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor |
|
| 3 | 2SD1962M |
ROHM Electronics |
(2SD1961 - 2SD2098) Low Frequency Silicon Power NPN Transistor |
|
| 4 | 2SD1963 |
Kexin |
Power Transistor |
|
| 5 | 2SD1964 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|