logo

Renesas Technology HN2 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
HN29V25611A

Renesas Technology
256M AND type Flash Memory More than 16057-sector

• On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
• Organization  AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)  Data register: (2048 + 64) bytes
• Multi-level memory cell  2 bit/per memory cell
• Automatic programming
Datasheet
2
HN29V2G74WT-30

Renesas Technology
AG-AND Flash Memory

• On-board single power supply: VCC = 2.7 V to 3.6 V
• Operation Temperature range: Ta = 0 to +70°C
• Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank × 2  Page size: (2048+64) bytes × 2  Block size: (2048+64) bytes × 2 pag
Datasheet
3
HN29V1G91T-30

Renesas Technology
128M X 8-bit AG-AND Flash Memory

• On-board single power supply: VCC = 2.7 V to 3.6 V
• Operation Temperature range: Ta = 0 to +70°C
• Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank  Page size: (2048+64) bytes  Block size: (2048+64) bytes × 2 page  Page
Datasheet
4
HN27C301A

Renesas Technology
1M UV and OTP EPROM
Datasheet
5
HN27C1024H

Renesas Technology
1M UV and OTP EPROM
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact