| No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas |
N-channel MOSFET • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0 A • RoHS Compliant Ordering Information Part No. N6006NZ-S17-AY ∗1 Lead Plating |
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Renesas Technology |
IGBT Low on resistance, High-speed switching Low Qg, Low Qgd Merits High efficiency Small package, Built-in 2 elements Mniaturization Example of Application Circuit (LCD TV, TFT Monitor, Note PC) Full Bridge Vin Vin Pch HAT3029R(30V) HAT3031R(60V) Nch& |
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Renesas |
Silicon N Channel MOS FET • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1118-0300 (Previous: ADE-208-1425A) Rev.3.00 Sep 07, 2005 1. Gate 2. Drain |
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