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H5N6001P |
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| Part Number | H5N6001P |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | H5N6001P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) Outline RENESAS Package code: PRSS0004ZE... |
| Features |
• Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1118-0300 (Previous: ADE-208-1425A) Rev.3.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.3.00 Sep 07, 2005 page 1 of 6 H5N6001P Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature ... |
| Document |
 H5N6001P Data Sheet
PDF 75.92KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H5N1503P |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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| 2 | H5N1506P |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 3 | H5N2001LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 4 | H5N2001LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | H5N2001LS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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