Renesas HAT fiche technique

No.	Partie #	Fabricant	Description
1	HAT1097R	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-A (Previous code: SOP-
2	HAT1097RJ	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-A (Previous code: SOP-
3	HAT2020R	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1157-1200 (Previous: ADE-208-439J) Re
4	HAT1055RJ	Renesas Technology	Silicon P-Channel Power MOSFET • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4
5	HAT1111C	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) www.DataSheet4U.com • Low drive current. • 4.5 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 S 1 2
6	HAT2266H	Renesas Technology	Silicon N-Channel Power MOSFET • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.2 mΩ typ. (at VGS = 10 V) • Lead Free Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 1 234 4
7	HAT1047RJ	Renesas	Silicon P-Channel Power MOSFET • For Automotive Application (at Type Code "J") • Low on-resistance • Capable of –4.5 V gate drive • High density mounting Outline REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.5.00 Aug.27.2003 SOP-8 DataShe8et746U5.com 56 7 8 DD D D 1 234 4
8	HAT2024R	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1159-0500 (Previou
9	HAT2016R	Renesas	Silicon N-Channel Power MOSFET • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1 234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1156-1000 (Previo
10	HAT3004R	Renesas	Silicon N-/P-Channel Power MOSFET • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 87 65 1234 2 4 G G S1 Nch 56 DD S3 Pch REJ03G1196-1100 (Previous: AD
11	HAT1023R	Renesas	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1 234 5678 DDDD SSS 123 REJ03G1145-0900 (Previous: ADE-208-436G)
12	HAT1021R	Renesas	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1 234 5678 DDDD SSS 123 REJ03G1144-0600 (Previous: ADE-208-475D)
13	HAT2140H	Renesas	Silicon N-Channel Power MOSFET • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 12.5 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 REJ03G1192-0400 (Previous:
14	HAT1047R	Renesas Technology	Silicon P-Channel Power MOSFET • • • • For Automotive Application (at Type Code "J") Low on-resistance Capable of –4.5 V gate drive High density mounting Outline SOP-8 5 DataSheet4U.com 7 6 8 DataShee 5 6 7 8 D D D D 3 1 2 4 4 G S S S 1 2 3 1, 2, 3 4 5, 6, 7, 8 Source Gat
15	HAT1065T	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of –4 V gate drive • High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 ) 87 6 5 123 4 REJ03G0161-0200 Rev.2.00 Aug 06, 2007 1 8 D D 4 5 G G S3 MOS1 S6 MOS2 1,
16	HAT2187WP	Renesas Technology	Silicon N-Channel MOSFET • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 32 1 G 5 678 D DDD REJ03G0535-0500 Rev.5.00 Sep.02,2005 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1
17	HAT1041T	Renesas Technology	Silicon P-Channel Power MOSFET www.DataSheet4U.com • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline TSSOP-8 65 34 87 12 1 5 8 D D D 4 G S S S S 2 3 6 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate HAT1041T Absolute Maximum Rat
18	HAT1065R	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance • Capable of –4 V gate drive • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8 7 65 2 G 1 234 78 DD 4 G S1 MOS1 56 DD S3 MOS2 REJ03G0579-0200 Rev.2.00 Apr 04, 2006 1, 3 So
19	HAT1091C	Renesas Technology	Silicon P-Channel Power MOSFET • Low on-resistance RDS(on) = 134 mΩ typ. (at VGS = –4.5 V) www.DataSheet4U.com • Low drive current. • 2.5 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5
20	HAT1110R	Renesas Technology	Silicon P-Channel Power MOSFET • Capable of –4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 78 56 DD DD 2 4 G G S1 MOS1 S3 MOS2 8 7 65 1 234 REJ03G0416-0200 Rev.2.00 Oct.07.2004 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum