No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas Technology |
2SK3446 • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D G 1. Source 2. Drain 3. Gate 32 1 S www.DataSheet4U.com Rev.8.00 |
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Renesas |
High Speed Power Switching MOSFET |
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Renesas |
2SK1057 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRS |
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Renesas |
Silicon N Channel MOS FET • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 |
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Renesas |
2SK1056 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRS |
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Renesas |
2SK1160 • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Drain (F |
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Renesas |
Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline REJ03G0957-0200 (Previous: ADE-208-1298) Rev.2.00 Sep 07, 2005 RENESAS Package code |
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Renesas |
Silicon N-Channel MOSFET |
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Renesas |
Silicon N-Channel MOSFET |
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Renesas |
Silicon N-Channel MOSFET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline REJ03G0908-0200 (Previous: ADE-208-1246) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004AC-A |
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Renesas |
Silicon N Channel MOS FET • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1050-0400 (Previous: ADE-208-559B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C •FM) |
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Renesas |
2SK560 |
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Renesas |
Silicon N-Channel MOSFET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Outline REJ03G0994-0200 (Previous: ADE-208-074) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P |
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Renesas |
Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive devices. REJ03G1060-0500 (Previous: ADE-208-659C) Rev.5.00 Sep.07,2005 Outline RENESAS Package code: PLZZ0004CA-A (Pack |
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Renesas |
Silicon N-Channel MOSFET • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G 123 REJ03G1045-0500 (Previous: ADE-208-554C) Rev.5.00 Sep 07, 20 |
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Renesas |
2SK3235 • • • • • Low on-resistance: R DS(on) = 0.3 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A) Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 1 |
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Renesas |
Silicon N-Channel MOSFET • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G |
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Renesas |
Silicon N-Channel MOSFET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline REJ03G0998-0200 (Previous: ADE-208-1346) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-2 |
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Renesas |
Silicon N Channel MOS FET • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Outline REJ03G0984-0300 (Previous: ADE-208-1332) Rev.3.00 Apr 27, 2006 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S 1 |
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Renesas |
Silicon N-Channel MOSFET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0943-0300 Rev.3.00 May 15, 20 |
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