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2SK1933 |
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| Part Number | 2SK1933 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | 2SK1933 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Outline REJ03G... |
| Features |
• Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Outline REJ03G0984-0300 (Previous: ADE-208-1332) Rev.3.00 Apr 27, 2006 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S 1. Gate 2. Drain (Flange) 3. Source Rev.3.00 Apr 27, 2006 page 1 of 6 2SK1933 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25... |
| Document |
 2SK1933 Data Sheet
PDF 76.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK193 |
NEC |
N-Channel FET |
|
| 2 | 2SK1930 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | 2SK1931 |
Shindengen Electric Mfg.Co.Ltd |
VR Series Power MOSFET |
|
| 4 | 2SK1933 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1933 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|